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PDF IXTQ120N15P Data sheet ( Hoja de datos )
| Número de pieza | IXTQ120N15P | |
| Descripción | PolarHT Power MOSFET | |
| Fabricantes | IXYS | |
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Advanced Technical Information
PolarHTTM
Power MOSFET
IXTQ 120N15P
IXTT 120N15P
VDSS
= 150 Vwww.DataSheet4U.com
ID25 = 120 A
≤RDS(on)
16 mΩ
N-Channel Enhancement Mode
Symbol
Test Conditions
Maximum Ratings
TO-3P (IXTQ)
VDSS
VDGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
150 V
150 V
VDSS
VGSM
Continuous
Transient
±20 V
±30 V
ID25
ID(RMS)
IDM
IAR
EAR
EAS
TC = 25°C
External lead current limit
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
120 A
75 A
260 A
60 A
60 mJ
2.0 J
dv/dt
PD
TJ
TJM
Tstg
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 4 Ω
TC = 25°C
10
600
-55 ... +175
175
-55 ... +150
V/ns
W
°C
°C
°C
TL
Md
Weight
1.6 mm (0.062 in.) from case for 10 s
Mounting torque (TO-3P)
TO-3P
TO-268
300 °C
1.13/10 Nm/lb.in.
5.5 g
5.0 g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
150 V
VGS(th)
VDS = VGS, ID = 250µA
3.0 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 175°C
25 µA
500 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
16 mΩ
G
DS
TO-268 (IXTT)
(TAB)
GS
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99298(01/05)
1 page  
1.00
0.10
0.01
0.1
IXTQ 120N15P
IXTT 120N15P
www.DataSheet4U.com
Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce
1 10 100
Pu ls e W id th - m illis e c o n d s
1000
© 2005 IXYS All rights reserved
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| PDF Descargar | [ Datasheet IXTQ120N15P.PDF ] | |
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