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IXGH40N60C2 の電気的特性と機能

IXGH40N60C2のメーカーはIXYSです、この部品の機能は「HiPerFAST IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXGH40N60C2
部品説明 HiPerFAST IGBT
メーカ IXYS
ロゴ IXYS ロゴ 




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IXGH40N60C2 Datasheet, IXGH40N60C2 PDF,ピン配置, 機能
HiPerFASTTM IGBT
C2-Class High Speed IGBTs
IXGH 40N60C2
IXGT 40N60C2
V
I CES
VC25
t CE(sat)
fi typ
www.DataSheet4U.com
= 600 V
= 75 A
= 2.7 V
= 32 ns
Symbol
Test Conditions
VCES
VCGR
VGES
VGEM
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
IC25
IC110
ICM
SSOA
(RBSOA)
PC
TC = 25°C (limited by leads)
TC = 110°C
TC = 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load @ 600 V
TC = 25°C
TJ
TJM
Tstg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Plastic body
Md
Weight
Mounting torque (M3)
Maximum Ratings
600 V
600 V
±20 V
±30 V
75 A
40 A
200 A
ICM = 80
A
300
-55 ... +150
150
-55 ... +150
300
W
°C
°C
°C
°C
200 °C
TO-247
TO-268
1.13/10Nm/lb.in.
6g
4g
Symbol
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
IC = 250 μA, VCE = VGE
VCE = VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = 30 A, VGE = 15 V
Characteristic Values
(TJ
=
25°C
unless otherwise specified)
min. typ. max.
3.0 5.0 V
TJ = 25°C
TJ = 150°C
TJ = 25°C
TJ = 150°C
50 μA
1 mA
±100 nA
2.2 2.7 V
2.0 V
TO-268 (IXGT)
G
E
TO-247 (IXGH)
C (TAB)
G
CE
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
z Very high frequency IGBT
z Square RBSOA
z High current handling capability
z MOS Gate turn-on
- drive simplicity
Applications
z PFC circuits
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
z AC motor speed control
z DC servo and robot drives
z DC choppers
Advantages
z High power density
z Very fast switching speeds for high
frequency applications
© 2005 IXYS All rights reserved
DS99042C(10/05)

1 Page





IXGH40N60C2 pdf, ピン配列
Fig. 1. Output Characteristics
@ 25 Deg. C
60
VGE = 15V
9V
50
13V
11V
40
7V
30
20
10
0
0.5
60
50
40
30
5V
1 1.5
2 2.5 3
VC E - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
VGE = 15V
13V
11V
9V
7V
3.5
20
10 5V
0
0.5
4
3.5
1 1.5 2 2.5
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter voltage
T J = 25º C
3
3
2.5
I C = 60A
2
30A
1.5
15A
1
5 6 7 8 9 10 11 12 13 14 15
VG E - Volts
© 2005 IXYS All rights reserved
IXGH 40N60C2
IXGT 40N60C2
www.DataSheet4U.com
Fig. 2. Extended Output Characteristics
@ 25 deg. C
210
VGE = 15V
180 13V
11V
150
9V
120
90
7V
60
30
5V
0
0 123 45 67
VC E - Volts
Fig. 4. T emperature Dependence of VCE(sat)
1.3
1.2
1.1 VGE = 15V
1
I C= 60A
0.9 I C= 30A
0.8
0.7
0.6
25
I C= 15A
50 75 100 125
TJ - Degrees Centigrade
150
Fig. 6. Input Admittance
210
180
150
120
90
60 TJ = 125º C
25º C
30 -40º C
0
4 5 67 8
VG E - Volts
9 10


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共有リンク

Link :


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