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PDF IS41LV85120A Data sheet ( Hoja de datos )
| Número de pieza | IS41LV85120A | |
| Descripción | 512K x 8 (4-MBIT) DYNAMIC RAM | |
| Fabricantes | Integrated Silicon Solution | |
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IS41C85120A
IS41LV85120A
512K x 8 (4-MBIT) DYNAMIC RAM
WITH EDO PAGE MODE
ISSI®
www.DataSheet4U.com
APRIL 2005
FEATURES
• TTL compatible inputs and outputs
• Refresh Interval: 1024 cycles/16 ms
• Refresh Mode : RAS-Only, CAS-before-RAS (CBR),
and Hidden
• JEDEC standard pinout
• Single power supply
5V ± 10% (IS41C85120A)
3.3V ± 10% (IS41LV85120A)
• Lead-free available
KEY TIMING PARAMETERS
Parameter
Max. RAS Access Time (tRAC)
Max. CAS Access Time (tCAC)
Max. Column Address Access Time (tAA)
Min. Fast Page Mode Cycle Time (tPC)
Min. Read/Write Cycle Time (tRC)
-60 Unit
60 ns
15 ns
30 ns
40 ns
110 ns
PIN DESCRIPTIONS
A0-A9
I/O0-I/O7
WE
OE
RAS
CAS
VCC
GND
NC
Address Inputs
Data Inputs/Outputs
Write Enable
Output Enable
Row Address Strobe
Column Address Strobe
Power
Ground
No Connection
DESCRIPTION
The ISSI IS41C85120A and IS41LV85120A are 524,288 x 8-
bit high-performance CMOS Dynamic Random Access
Memory. Both products offer accelerated cycle access EDO
Page Mode. EDO Page Mode allows 512 random accesses
within a single row with access cycle time as short as 10ns per
8-bit word. The Byte Write control, of upper and lower byte,
makes the IS41C85120A and IS41LV85120A ideal for use in
16 and 32-bit wide data bus systems.
These features make the IS41C85120A and IS41LV85120A
ideally suited for high band-width graphics, digital signal
processing, high-performance computing systems, and periph-
eral applications.
The IS41C85120A and IS41LV85120A are available in a
28-pin, 400-mil SOJ package.
PIN CONFIGURATION
28-Pin SOJ
VCC
I/O0
I/O1
I/O2
I/O3
NC
WE
RAS
A9
A0
A1
A2
A3
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28 GND
27 I/O7
26 I/O6
25 I/O5
24 I/O4
23 CAS
22 OE
21 NC
20 A8
19 A7
18 A6
17 A5
16 A4
15 GND
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/22/05
1
1 page  
IS41C85120A
IS41LV85120A
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameters
Rating
Unit
VT
VCC
IOUT
PD
TA
TSTG
Voltage on Any Pin Relative to GND
Supply Voltage
Output Current
Power Dissipation
Commercial Operation Temperature
Storage Temperature
5V
3.3V
5V
3.3V
–1.0 to +7.0
-0.5 to 4.6
–1.0 to +7.0
-0.5 to 4.6
50
1
0 to +70
–55 to +125
V
V
V
V
mA
W
°C
°C
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
ISSI ®
www.DataSheet4U.com
RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.)
Symbol
VCC
Parameter
Supply Voltage
VIH Input High Voltage
VIL Input Low Voltage
TA Commercial Ambient Temperature
5V
3.3V
5V
3.3V
5V
3.3V
Min.
4.5
3.0
2.4
2.0
–1.0
–0.3
0
Typ.
5.0
3.3
—
—
—
—
—
Max.
5.5
3.6
VCC + 1.0
VCC + 0.3
0.8
0.8
70
Unit
V
V
V
°C
CAPACITANCE(1,2)
Symbol Parameter
Max.
CIN1 Input Capacitance: A0-A9
CIN2 Input Capacitance: RAS, CAS, WE, OE
CIO Data Input/Output Capacitance: I/O0-I/O7
5
7
7
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz,
Unit
pF
pF
pF
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/22/05
5
5 Page 
IS41C85120A
IS41LV85120A
EARLY WRITE CYCLE (OE = DON'T CARE)
RAS
tCRP
CAS
tASR
ADDRESS
Row
WE
I/O
tRAS
tRC
tRCD
tCSH
tRSH
tCAS tCLCH
tRAD
tRAH
tASC
tAR
tRAL
tCAH
tACH
Column
tWCR
tWCS
tCWL
tRWL
tWCH
tWP
tDHR
tDS
tDH
Valid Data
ISSI ®
www.DataSheet4U.com
tRP
Row
Don't Care
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/22/05
11
11 Page | ||
| Páginas | Total 21 Páginas | |
| PDF Descargar | [ Datasheet IS41LV85120A.PDF ] | |
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