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PDF IS41LV16257A Data sheet ( Hoja de datos )
| Número de pieza | IS41LV16257A | |
| Descripción | 256K x 16 (4-MBIT) DYNAMIC RAM | |
| Fabricantes | Integrated Silicon Solution | |
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IS41C16257A
IS41LV16257A
256K x 16 (4-MBIT) DYNAMIC RAM
WITH FAST PAGE MODE
ISSI®
www.DataSheet4U.com
APRIL 2005
FEATURES
• Fast access and cycle time
• TTL compatible inputs and outputs
• Refresh Interval: 512 cycles/8 ms
• Refresh Mode: RAS-Only, CAS-before-RAS (CBR),
and Hidden
• JEDEC standard pinout
• Single power supply:
-- 5V ± 10% (IS41C16257A)
-- 3.3V ± 10% (IS41LV16257A)
• Byte Write and Byte Read operation via two CAS
• Lead-free available
DESCRIPTION
The ISSI IS41C16257A and the IS41LV16257A are
262,144 x 16-bit high-performance CMOS Dynamic
Random Access Memories. Fast Page Mode allows
512 random accesses within a single row with access
cycle time as short as 12 ns per 16-bit word. The Byte
Write control, of upper and lower byte, makes these
devices ideal for use in 16- and 32-bit wide data bus
systems.
These features make the IS41C16257A and the
IS41LV16257A ideally suited for high band-width
graphics, digital signal processing, high-performance
computing systems, and peripheral applications.
The IS41C16257A and the IS41LV16257A are
packaged in a 40-pin, 400-mil SOJ and TSOP (Type II).
KEY TIMING PARAMETERS
Parameter
Max. RAS Access Time (tRAC)
Max. CAS Access Time (tCAC)
Max. Column Address Access Time (tAA)
Min. Fast Page Mode Cycle Time (tPC)
Min. Read/Write Cycle Time (tRC)
-35 -60 Unit
35 60 ns
11 15 ns
18 30 ns
14 25 ns
60 110 ns
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/22/05
1
1 page  
IS41C16257A
IS41LV16257A
ISSI®
ABSOLUTE MAXIMUM RATINGS(1)
www.DataSheet4U.com
Symbol Parameters
Rating
Unit
VT Voltage on Any Pin Relative to GND 5V –1.0 to +7.0
3.3V –0.5 t0 +4.6
VCC Supply Voltage
5V
3.3V
–1.0 to +7.0
–0.5 t0 +4.6
IOUT Output Current
50
PD Power Dissipation
1
TA Operation Temperature
Com.
0 to +70
TSTG
Storage Temperature
–55 to +125
V
V
mA
W
°C
°C
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND)
Symbol
VCC
VCC
VIH
VIH
VIL
VIL
TA
Parameter
Supply Voltage
Supply Voltage
Input High Voltage
Input High Voltage
Input Low Voltage
Input Low Voltage
Ambient Temperature
Voltage
5V
3.3V
5V
3.3V
5V
3.3
Com.
Min.
4.5
3.0
2.4
2.0
–1.0
–0.3
0
Typ.
5.0
3.3
—
—
—
—
—
Max.
5.5
3.6
VCC + 1.0
VCC + 0.3
0.8
0.8
70
Unit
V
V
V
V
V
V
°C
CAPACITANCE(1,2)
Symbol Parameter
Max.
Unit
CIN1 Input Capacitance: A0-A8
CIN2 Input Capacitance: RAS, UCAS, LCAS, WE, OE
CIO Data Input/Output Capacitance: I/O0-I/O15
5 pF
7 pF
7 pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, VCC = 5.0V + 10% or Vcc=3.3V ± 10%.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/22/05
5
5 Page 
IS41C16257A
IS41LV16257A
FAST PAGE MODE READ-MODIFY-WRITE CYCLE
ISSI®
www.DataSheet4U.com
RAS
tRASP
tRP
tCRP
UCAS/LCAS
tRCD
tCSH
tCAS
ADDRESS
tAR
tRAH
tASR
tRAD
Row
tCAH
tASC
Column
tAR
WE
tRCS
tCWL
tRWD
tAWD
tCWD
tPRWC
tCAS
tCP
tCPWD
tASC
tCAH
Column
tCWL
tAWD
tWP tCWD
tRSH
tCAS
tCP
tCRP
tCPWD
tRAL
tCAH
tASC
Column
tCWL
tRWL
tAWD
tWP tCWD
tWP
tAA tAA tAA
tCAC
tCAC
tCAC
OE
tOEA
tOEA
tOEA
I/O0-I/O15
tRAC
tCLZ
OUT
tOEZ
tOED
tDH
tDS tCLZ
IN
tOEZ
tOED
tDS
tDH
OUT IN
tCLZ
OUT
tOEZ
tOED
tDS
tDH
IN
Don't Care
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/22/05
11
11 Page | ||
| Páginas | Total 20 Páginas | |
| PDF Descargar | [ Datasheet IS41LV16257A.PDF ] | |
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