IS41LV16256A Datasheet PDF - Integrated Silicon Solution
| Part Number | IS41LV16256A | |
| Description | 256K x 16 (4-MBIT) DYNAMIC RAM | |
| Manufacturers | Integrated Silicon Solution | |
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IS41C16256A
IS41LV16256A
256K x 16 (4-MBIT) DYNAMIC RAM
WITH EDO PAGE MODE
ISSI®
APwRwIwL.D2a0ta0S5heet4U.com
FEATURES
• TTL compatible inputs and outputs
• Refresh Interval: 512 cycles/8 ms
• Refresh Mode : RAS-Only, CAS-before-RAS (CBR),
and Hidden
• JEDEC standard pinout
• Single power supply
5V ± 10% (IS41C16256A)
3.3V ± 10% (IS41LV16256A)
• Byte Write and Byte Read operation via two CAS
• Lead-free available
KEY TIMING PARAMETERS
DESCRIPTION
The ISSI IS41C16256A and IS41LV16256A are 262,144 x 16-
bit high-performance CMOS Dynamic Random Access
Memory. Both products offer accelerated cycle access EDO
Page Mode. EDO Page Mode allows 512 random accesses
within a single row with access cycle time as short as 10ns per
16-bit word. The Byte Write control, of upper and lower byte,
makes the IS41C16256A and IS41LV16256A ideal for use in
16 and 32-bit wide data bus systems.
These features make the IS41C16256A and IS41LV1626 ide-
ally suited for high band-width graphics, digital signal pro-
cessing, high-performance computing systems, and peripheral
applications.
The IS41C16256A and IS41LV16256A are packaged in 40-
pin 400-mil SOJ and TSOP (Type II).
Parameter
Max. RAS Access Time (tRAC)
Max. CAS Access Time (tCAC)
Max. Column Address Access Time (tAA)
Min. EDO Page Mode Cycle Time (tPC)
Min. Read/Write Cycle Time (tRC)
-35
35
11
18
14
60
PIN CONFIGURATIONS
40-Pin TSOP (Type II)
40-Pin SOJ
-60 Unit
60 ns
15 ns
30 ns
25 ns
110 ns
VCC
I/O0
I/O1
I/O2
I/O3
VCC
I/O4
I/O5
I/O6
I/O7
1
2
3
4
5
6
7
8
9
10
NC
NC
WE
RAS
NC
A0
A1
A2
A3
VCC
11
12
13
14
15
16
17
18
19
20
40 GND
39 I/O15
38 I/O14
37 I/O13
36 I/O12
35 GND
34 I/O11
33 I/O10
32 I/O9
31 I/O8
30 NC
29 LCAS
28 UCAS
27 OE
26 A8
25 A7
24 A6
23 A5
22 A4
21 GND
VCC
I/O0
I/O1
I/O2
I/O3
VCC
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RAS
NC
A0
A1
A2
A3
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40 GND
39 I/O15
38 I/O14
37 I/O13
36 I/O12
35 GND
34 I/O11
33 I/O10
32 I/O9
31 I/O8
30 NC
29 LCAS
28 UCAS
27 OE
26 A8
25 A7
24 A6
23 A5
22 A4
21 GND
PIN DESCRIPTIONS
A0-A8
I/O0-15
WE
OE
RAS
UCAS
LCAS
Vcc
GND
NC
Address Inputs
Data Inputs/Outputs
Write Enable
Output Enable
Row Address Strobe
Upper Column Address Strobe
Lower Column Address Strobe
Power
Ground
No Connection
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/28/05
1
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IS41C16256A
IS41LV16256A
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameters
Rating
Unit
VT
VCC
IOUT
PD
TA
TSTG
Voltage on Any Pin Relative to GND
Supply Voltage
Output Current
Power Dissipation
Commercial Operation Temperature
Storage Temperature
5V
3.3V
5V
3.3V
–1.0 to +7.0
-0.5 to 4.6
–1.0 to +7.0
-0.5 to 4.6
50
1
0 to +70
–55 to +125
V
V
V
V
mA
W
°C
°C
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
ISSI ®
www.DataSheet4U.com
RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.)
Symbol
VCC
Parameter
Supply Voltage
VIH Input High Voltage
VIL Input Low Voltage
TA Commercial Ambient Temperature
5V
3.3V
5V
3.3V
5V
3.3V
Min.
4.5
3.0
2.4
2.0
–1.0
–0.3
0
Typ.
5.0
3.3
—
—
—
—
—
Max.
5.5
3.6
VCC + 1.0
VCC + 0.3
0.8
0.8
+70
Unit
V
V
V
°C
CAPACITANCE(1,2)
Symbol Parameter
Max.
CIN1 Input Capacitance: A0-A8
CIN2 Input Capacitance: RAS, UCAS, LCAS, WE, OE
CIO Data Input/Output Capacitance: I/O0-I/O15
5
7
7
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz,
Unit
pF
pF
pF
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/28/05
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IS41LV16256A electronic component. |
| Information | Total 22 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IS41LV16256A.PDF Datasheet ] | |
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