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PDF IXTQ22N60P Data sheet ( Hoja de datos )
| Número de pieza | IXTQ22N60P | |
| Descripción | PolarHV Power MOSFET | |
| Fabricantes | IXYS | |
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PolarHVTM
Power MOSFET
IXTQ 22N60P
IXTV 22N60P
IXTV 22N60PS
V
DSS
ID25
RDS(on)
www.DataSheet4U.com
= 600 V
= 22 A
≤ 330 mΩ
N-Channel Enhancement Mode
Preliminary Data Sheet
TO-3P (IXTQ)
Symbol
Test Conditions
Maximum Ratings
V
DSS
VDGR
VGS
VGSM
ID25
IDM
IAR
E
AR
EAS
dv/dt
PD
T
J
TJM
Tstg
TL
T
J
= 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Tranisent
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
T
C
= 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 4 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
600
600
±20
±30
22
66
22
40
1.0
10
400
-55 ... +150
150
-55 ... +150
300
250
V
V
G
V DS
V
A
A PLUS220 (IXTV)
A
mJ
J
V/ns
G
D
S
PLUS220SMD (IXTV_S)
(TAB)
D (TAB)
W
°C
°C
°C G
°C S
°C
D (TAB)
Md
Weight
Mounting torque (TO-3P)
TO-3P
PLUS220 & PLUS220SMD
1.13/10 Nm/lb.in.
6g
5.0 g G = Gate
S = Source
D = Drain
TAB = Drain
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
V
DSS
V
GS
=
0
V,
I
D
=
250
µA
Characteristic Values
Min. Typ. Max.
600 V
VGS(th)
VDS = VGS, ID = 250µA
3.0 5.0 V
I
GSS
V
GS
=
±30
V,
DC
V
DS
=
0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
330 mΩ
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99250B(04/05)
1 page  
1.00
0.10
0.01
0.1
IXTQ 22N60P IXTV 22N60P
IXTV 22N60PS
www.DataSheet4U.com
Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce
1 10 100
Pu ls e W idth - millis e c o n ds
1000
© 2005 IXYS All rights reserved
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTQ22N60P.PDF ] | |
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