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IXFR36N60P の電気的特性と機能

IXFR36N60PのメーカーはIXYSです、この部品の機能は「PolarHV HiPerFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFR36N60P
部品説明 PolarHV HiPerFET Power MOSFET
メーカ IXYS
ロゴ IXYS ロゴ 




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IXFR36N60P Datasheet, IXFR36N60P PDF,ピン配置, 機能
Advance Technical Information
PolarHVTM HiPerFET
Power MOSFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFR 36N60P
V
DSS
ID25
RDS(on)
trr
www.DataSheet4U.com
= 600 V
= 20 A
200 m
250 ns
Preliminary Data Sheet
Symbol
Test Conditions
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
VGSS
VGSM
Continuous
Transient
ID25 TC = 25°C
I
DM
T
C
=
25°C,
pulse
width
limited
by
T
JM
I
AR
T
C
= 25°C
EAR TC = 25°C
EAS TC = 25°C
dv/dt
PD
TJ
TJM
Tstg
VISOL
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 4
TC = 25°C
50/60 Hz, RMS, 1 minute
Md
Weight
Mounting torque
Isoplus247
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
600 V
600 V
ISOPLUS247 (IXFR)
E153432
±30 V
±40 V
20 A
G
DS
80 A
36 A G = Gate D = Drain
50 mJ S = Source
1.5 J
20 V/ns
208
-55 ... +150
150
-55 ... +150
2500
W
°C
°C
°C
V~
1.13/10 Nm/lb.in.
5g
300 °C
Features
z Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z International standard packages
z Fast recovery diode
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
(T
J
=
25°C,
unless
otherwise
specified)
V
DSS
V
GS
=
0
V,
I
D
=
250
µA
VGS(th)
VDS = VGS, ID = 4 mA
Characteristic Values
Min. Typ. Max.
600 V
3.0 5.0 V
Advantages
z Easy to mount
z Space savings
z High power density
IGSS VGS = ±30 VDC, VDS = 0
±200 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
100 µA
1000 µA
RDS(on)
VGS = 10 V, ID = IT (note 1)
Pulse test, t 300 µs, duty cycle d 2 %
200 m
© 2005 IXYS All rights reserved
DS99395(05/05)

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IXFR36N60P pdf, ピン配列
36
32
28
24
20
16
12
8
4
0
0
36
32
28
24
20
16
12
8
4
0
0
Fig. 1. Output Characteristics
@ 25ºC
VGS = 10V
7V
6V
5V
123456
VD S - Volts
Fig. 3. Output Characteristics
@ 125ºC
VGS = 10V
7V
7
6V
5V
2 4 6 8 10 12 14 16
VD S - Volts
Fig. 5. RDS(on) Norm alized to
0.5 ID25 Value vs. ID
3.4
3.0 VGS = 10V
2.6
TJ = 125ºC
2.2
1.8
1.4
TJ = 25ºC
1.0
0.6
0
10 20 30 40 50 60
I D - Amperes
70 80 90
© 2005 IXYS All rights reserved
IXFR 36N60P
Fig. 2. Extended Output Cwhwawr.aDcattearSihseteict4sU.com
@ 25ºC
90
VGS = 10V
80 8V
70
60 7V
50
40 6V
30
20
10
5V
0
0 3 6 9 12 15 18 21 24 27 30
VD S - Volts
Fig. 4. RDS(on) Norm alize d to 0.5 ID25
Value vs. Junction Tem perature
3.1
2.8 VGS = 10V
2.5
2.2
1.9 ID = 36A
1.6
1.3 ID = 18A
1
0.7
0.4
-50 -25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
22
20
18
16
14
12
10
8
6
4
2
0
-50
Fig. 6. Drain Current vs. Case
Tem perature
-25 0 25 50 75 100 125 150
TC - Degrees Centigrade


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部品番号部品説明メーカ
IXFR36N60P

PolarHV HiPerFET Power MOSFET

IXYS
IXYS


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