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IXFK64N50P の電気的特性と機能

IXFK64N50PのメーカーはIXYSです、この部品の機能は「PolarHV HiPerFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFK64N50P
部品説明 PolarHV HiPerFET Power MOSFET
メーカ IXYS
ロゴ IXYS ロゴ 




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IXFK64N50P Datasheet, IXFK64N50P PDF,ピン配置, 機能
Advance Technical Information
PolarHVTM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Preliminary Data Sheet
IXFK 64N50P
IXFX 64N50P
V
DSS
ID25
RDS(on)
trr
www.DataSheet4U.com
= 500 V
= 64 A
85 m
200 ns
TO-264 AA (IXFK)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
VGSS
VGSM
Continuous
Transient
ID25 TC = 25°C
I
DM
T
C
=
25°C,
pulse
width
limited
by
T
JM
I
AR
T
C
= 25°C
EAR TC = 25°C
EAS TC = 25°C
dv/dt
PD
TJ
TJM
Tstg
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 4
TC = 25°C
Md
Weight
Mounting torque (TO-264)
TO-264
PLUS247
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
500 V
500 V
±30 V
±40 V
64 A
150 A
64 A
80 mJ
2.5 J
20 V/ns
830
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
1.13/10 Nm/lb.in.
10 g
6g
300 °C
Symbol
Test Conditions
(T
J
=
25°C,
unless
otherwise
specified)
V
DSS
V
GS
=
0
V,
I
D
=
250
µA
Characteristic Values
Min. Typ. Max.
500 V
VGS(th)
VDS = VGS, ID = 8 mA
3.0 5.0 V
IGSS VGS = ±30 VDC, VDS = 0
±200 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 µA
1000 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
85 m
G
D
S
G = Gate
S = Source
(TAB)
D = Drain
PLUS247
(IXFX)
(TAB)
G = Gate D = Drain
S = Source Tab = Drain
Features
z International standard packages
z Fast recovery diode
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99348(05/05)

1 Page





IXFK64N50P pdf, ピン配列
Fig. 1. Output Characteristics
@ 25ºC
70
VGS = 10V
60 8V
7V
50
40 6V
30
20
10 5V
0
0
64
56
48
40
32
24
16
8
0
0
123456
VD S - Volts
Fig. 3. Output Characteristics
@ 125ºC
VGS = 10V
8V
7V
7
6V
5V
2 4 6 8 10 12 14
VD S - Volts
Fig. 5. RDS(on) Norm alize d to
0.5 ID25 Value vs. ID
3.4
3.1 VGS = 10V
2.8
TJ = 125ºC
2.5
2.2
1.9
1.6
1.3
1 TJ = 25ºC
0.7
0
20 40 60 80 100 120 140 160
I D - Amperes
© 2005 IXYS All rights reserved
IXFK 64N50P
IXFX 64N50P
Fig. 2. Extended Output Cwhwawr.aDcattearSihseteict4sU.com
@ 25ºC
160
VGS = 10V
140 8V
120
100 7V
80
60
6V
40
20 5V
0
0 4 8 12 16 20 24
VD S - Volts
Fig. 4. RDS(on) Norm alize d to 0.5 ID25
Value vs. Junction Tem perature
3.1
2.8 VGS = 10V
2.5
2.2
1.9 ID = 64A
1.6
ID = 32A
1.3
1
0.7
0.4
-50 -25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case
Tem perature
70
60
50
40
30
20
10
0
-50 -25 0 25 50 75 100 125 150
TC - Degrees Centigrade


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共有リンク

Link :


部品番号部品説明メーカ
IXFK64N50P

PolarHV HiPerFET Power MOSFET

IXYS
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IXFK64N50Q3

Power MOSFETs

IXYS
IXYS


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