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IXTH36N50P の電気的特性と機能

IXTH36N50PのメーカーはIXYSです、この部品の機能は「PolarHV Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXTH36N50P
部品説明 PolarHV Power MOSFET
メーカ IXYS
ロゴ IXYS ロゴ 




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IXTH36N50P Datasheet, IXTH36N50P PDF,ピン配置, 機能
PolarHVTM
Power MOSFET
N-Channel Enhancement
ModeAvalanche Rated
Fast Intrinsic Diode
Advance Technical Information
IXTH 36N50P
IXTT 36N50P
IXTQ 36N50P
IXTV 36N50P
IXTV 36N50PS
V = 500 VDSS
www.DataSheet4U.com
ID25 = 36 A
=RDS(on) 170 m
TO-3P (IXTQ)
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
FC
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 10
TC = 25°C
500 V
500
V
G
DS
±20 V
±30 V TO-247 (IXTH)
36 A
108 A
36 A
50 mJ
1.5 J
10 V/ns TO-268 (IXTT)
540
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
G
S
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
for 10s
300 °C PLUS220 (IXTV)
260 °C
Mounting torque(TO-247)
Mounting force (PLUS220)
TO-247
TO-268
PLUS220
TO-3P
1.13/10 Nm/lb.in.
20..120/4.5..15
N/lb
6g
5g
2g
5.5 g
G
DS
PLUS220 SMD(IXTV..S)
(TAB)
(TAB)
D (TAB)
D (TAB)
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
500 V
VGS(th)
VDS = VGS, ID = 250 µA
3.0 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
170 m
G
S
G = Gate
S = Source
D (TAB)
D = Drain
TAB = Drain
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
© 2005 IXYS All rights reserved
DS99228A(09/05)

1 Page





IXTH36N50P pdf, ピン配列
IXTH 36N50P IXTQ 36N50P IXTT 36N50P
IXT V36N50P IXTV 36N50PS
36
32
28
24
20
16
12
8
4
0
0
Fig. 3. Output Characteristics
@ 125ºC
VGS = 10V
7V
6V
5.5V
5V
4.5V
2 4 6 8 10 12 14 16
VD S - Volts
Fig. 4. RDS(on) Norm alizwewdwto.D0a.t5aSIhDe25et4U.com
Value vs. Junction Tem perature
3.1
2.8 VGS = 10V
2.5
2.2
1.9 ID = 36A
1.6
1.3 ID = 18A
1
0.7
0.4
-50 -25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 5. RDS(on) Norm alized to
0.5 ID25 Value vs. ID
3. 4
3 VGS = 10V
2.6 TJ = 125C
2. 2
1. 8
1. 4
1 TJ = 25C
Fig. 6. Drain Current vs. Case
Tem perature
40
35
30
25
20
15
10
5
0. 6
0
55
50
45
40
35
30
25
20
15
10
5
0
4
10 20 30 40 50 60
I D - Amperes
Fig. 7. Input Adm ittance
70
TJ = 125C
25C
-40C
4.5 5 5.5 6 6.5
VG S - Volts
80
7
0
-50 -25 0 25 50 75 100 125 150
TC - Degrees Centigrade
Fig. 8. Transconductance
70
60 TJ = -40C
25C
50 125C
40
30
20
10
0
0 10 20 30 40 50 60 70 80 90
I D - Amperes
© 2005 IXYS All rights reserved


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部品番号部品説明メーカ
IXTH36N50P

PolarHV Power MOSFET

IXYS
IXYS


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