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IXTK88N30P PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTK88N30P
部品説明 PolarHT Power MOSFET
メーカ IXYS
ロゴ IXYS ロゴ 



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IXTK88N30P Datasheet, IXTK88N30P PDF,ピン配置, 機能
PolarHTTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTH 88N30P
IXTK 88N30P
IXTQ 88N30P
IXTT 88N30P
VDSS
= 300 Vwww.DataSheet4U.com
ID25 = 88 A
=RDS(on) 40 m
TO-247 (IXTH)
D (TAB)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
VGS
VGSM
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
300 V
300 V
±20 V
±30 V
ID25
ID(RMS)
IDM
IAR
EAR
EAS
TC = 25°C
External lead current limit
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
88 A
75 A
220 A
60 A
60 mJ
2.0 J
dv/dt
PD
TJ
TJM
Tstg
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 4
TC = 25°C
10 V/ns
600
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
TL
Md
Weight
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247
TO-264
TO-3P & TO-268
300 °C
1.13/10 Nm/lb.in.
6.0 g
10 g
5.5 g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
300 V
VGS(th)
VDS = VGS, ID = 250µA
2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
100 µA
1 mA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
40 m
TO-3P (IXTQ)
G
DS
TO-264 (IXTK)
(TAB)
G
D
S
TO-268 (IXTT)
D (TAB)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard package
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99129B(09/05)

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