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IXTY1R4N60P PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTY1R4N60P
部品説明 PolarHV Power MOSFET
メーカ IXYS
ロゴ IXYS ロゴ 



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IXTY1R4N60P Datasheet, IXTY1R4N60P PDF,ピン配置, 機能
Advance Technical Information
PolarHVTM
Power MOSFET
N-Channel Enhancement Mode
IXTP 1R4N60P
IXTY 1R4N60P
IXTU 1R4N60P
VDSS
= 600 Vwww.DataSheet4U.com
ID25 = 1.4 A
RDS(on) 9.0 Ω
Symbol
VDSS
V
DGR
VGS
VGSM
I
D25
I
DM
IAR
E
AR
E
AS
dv/dt
PD
T
J
TJM
Tstg
T
L
Weight
Test Conditions
TJ = 25°C to 175°C
T
J
=
25°C
to
175°C;
R
GS
=
1
MΩ
Continuous
Transient
T
C
= 25°C
T
C
=
25°C,
pulse
width
limited
by
T
JM
TC = 25°C
T
C
= 25°C
T
C
= 25°C
IS IDM, di/dt 100 A/μs, VDD VDSS,
TJ 150°C, RG = 20 Ω
TC = 25°C
Maximum tab temperature for soldering
TO-252 package for 10s
TO-220
TO-252
TO-251
TO-251 AA (IXTU)
Maximum Ratings
600 V
600 V
±30 V
±40 V
1.4 A
2.1 A
G
D
S
1.4 A
5 mJ TO-220 (IXTP)
75 mJ
10 V/ns
50
-55 ... +150
150
-55 ... +150
260
4.0
0.35
0.4
W G DS
°C
°C TO-252 (IXTY)
°C
°C G
S
g
g
g
(TAB)
(TAB)
(TAB)
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 25 μA
Characteristic Values
Min. Typ. Max.
600 V
V
GS(th)
V
DS
=
V,
GS
I
D
=
25
μA
3.0 5.5 V
IGSS VGS = ±30 VDC, VDS = 0
±50 nA
IDSS
VDS = VDSS
V =0V
GS
T
J
=
125°C
1 μA
20 μA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 μs, duty cycle d 2 %
9.0 Ω
G = Gate
S = Source
Features
D = Drain
TAB = Drain
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99253(09/05)

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