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IRF2907ZS-7PPbF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRF2907ZS-7PPbF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRF2907ZS-7PPbF Datasheet, IRF2907ZS-7PPbF PDF,ピン配置, 機能
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IRF2907ZS-7PPbF
Features
l Advanced Process Technology
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l 175°C Operating Temperature
D VDSS = 75V
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
G
RDS(on) = 3.8m‰
Description
Specifically designed for high current, high reliabil-
ity applications, this HEXFET® Power MOSFET
utilizes the latest processing techniques and ad-
vanced packaging technology to achieve extremely
low on-resistance and world -class current ratings.
Additional features of this design are a 175°C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating . These
features combine to make this design an extremely
efficient and reliable device for use in Server &
Telecom OR'ing, Automotive and low voltage Motor
Drive Applications.
S
S (Pin 2, 3, 5, 6, 7)
G (Pin 1)
ID = 160A
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
Continuous Drain Current, VGS @ 10V (Package Limited)
cPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS
EAS (tested)
IAR
EAR
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
hSingle Pulse Avalanche Energy Tested Value
cAvalanche Current
gRepetitive Avalanche Energy
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
jJunction-to-Case
Case-to-Sink, Flat, Greased Surface
jJunction-to-Ambient
ijJunction-to-Ambient (PCB Mount, steady state)
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
Max.
180
120
160
700
300
2.0
± 20
160
410
See Fig.12a,12b,15,16
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
–––
Max.
0.50
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
08/03/05

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