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PDF IXFR64N60P Data sheet ( Hoja de datos )
| Número de pieza | IXFR64N60P | |
| Descripción | PolarHV HiPerFET Power MOSFET | |
| Fabricantes | IXYS | |
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Advance Technical Information
PolarHVTM HiPerFET
Power MOSFET
IXFR 64N60P
(Electrically Isolated Back Surface)
VDSS
ID25
RDS(on)
trr
= 600 Vwww.DataSheet4U.com
= 29 A
≤ 105 mΩ
≤ 200 ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
ISOPLUS247 (IXFR)
Maximum Ratings
E153432
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
VISOL
FC
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
50/60 Hz, RMS, 1 minute
Mounting force
ISOPLUS247
600
600
± 30
± 40
29
150
64
80
3.5
20
200
-55 ... +150
150
-55 ... +150
2500
22..130/5..29
5
V
V
V
V Isolated back surface
A
A G = Gate
S = Source
A
D = Drain
mJ
J
V/ns
W
°C
°C
°C
V~
Features
z Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
N/lb
g Advantages
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 3 mA
VGS(th)
VDS = VGS, ID = 8 mA
IGSS VGS = ± 30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = IT , Note 1
Characteristic Values
Min. Typ. Max.
600 V
3.0 5.0 V
± 200 nA
TJ = 125°C
25 μA
1000 μA
105 mΩ
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99441(09/05)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFR64N60P.PDF ] | |
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