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IXTV26N60P PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTV26N60P
部品説明 PolarHV Power MOSFET
メーカ IXYS
ロゴ IXYS ロゴ 



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IXTV26N60P Datasheet, IXTV26N60P PDF,ピン配置, 機能
AAddvvaanncceeTTeecchhnnicicaal lInInfoforrmmaatitoionn
PolarHVTM
Power MOSFET
N-Channel Enhancement Mode
Fast Recovery Diode
Avalanche Rated
IXTH 26N60P
IXTQ 26N60P
IXTT 26N60P
IXTV 26N60P
IXTV 26N60PS
V = 600 VDSS
www.DataSheet4U.com
ID25 = 26 A
RDS(on) 270 mΩ
TO-247 (IXTH)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/μs, VDD VDSS
TJ 150°C, RG = 5 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body
Mounting torque (TO-3P&TO-247)
Mounting force (PLUS220)
TO-3P
TO-248
TO-268
PLUS220 & PLUS220SMD
Maximum Ratings
600 V
600 V
±30 V
±40 V
26 A
65 A
26 A
40 mJ
1.2 J
10 V/ns
460 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
250 °C
1.13/10 Nm/lb.in.
11..65/2.5..15
N/lb
5.5 g
6.0 g
5.0 g
4.0 g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 4 mA
IGSS VGS = ±30 V, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 μs, duty cycle d 2 %
Characteristic Values
Min. Typ. Max.
600 V
2.5 5.0 V
±100 nA
25 μA
250 μA
270 m Ω
© 2005 IXYS All rights reserved
G
DS
TO-3P (IXTQ)
G
D
S
TO-268 (IXTT)
D (TAB)
G
S
PLUS220 (IXTV)
D (TAB)
G
D
S
PLUS220SMD (IXTV_S)
D (TAB)
G
S
G = Gate
S = Source
D (TAB)
D = Drain
TAB = Drain
Features
z Fast Recovery diode
z Unclamped Inductive Switching (UIS)
rated
z International standard packages
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
DS99376(08/05)

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