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Número de pieza | IXFT36N50P | |
Descripción | PolarHV HiPerFET Power MOSFET | |
Fabricantes | IXYS | |
Logotipo | ||
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No Preview Available ! Advance Technical Information
PolarHVTM
HiPerFET
Power MOSFET
N-Channel Enhancement
ModeAvalanche Rated
Fast Intrinsic Diode
IXFH 36N50P
IXFT 36N50P
IXFV 36N50P
IXFV 36N50PS
V = 500 VDSS
www.DataSheet4U.com
ID25 = 36 A
=RDS(on) 170 mΩ
TO-247 AD (IXFH)
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 10 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
for 10s
Mounting torque(TO-247)
TO-247
TO-268
PLUS220
(TAB)
Maximum Ratings
500 V TO-268 (IXTT)
500 V
± 30
± 40
36
108
36
50
1.5
V
V
G
AS
A
A
mJ PLUS220 (IXFV)
J
10
540
-55 ... +150
150
-55 ... +150
300
260
V/ns
G
W DS
°C
°C PLUS220SMD (IXFV...S)
°C
°C
°C
D (TAB)
D (TAB)
1.13/10 Nm/lb.in.
6g
5g
2g
G
S
G = Gate
S = Source
D (TAB)
D = Drain
TAB = Drain
Features
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 4 mA
Characteristic Values
Min. Typ. Max.
500 V
VGS(th)
VDS = VGS, ID = 250μA
3.0 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 μA
250 μA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
170 mΩ
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99364D(10/05)
1 page IXFH36N50P IXFT 36N50P
IXFV 36N50P
Fig. 13. Maximum Transient Thermal Resistance www.DataSheet4U.com
1.00
0.10
0.01
0.1
1 Pulse Width1-0milliseconds 100
1000
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience,
and constitute a "considered reflection" of the anticipated objective result. Ixys reserves the right to
change limits, test conditions, and dimensions without notice.
© 2005 IXYS All rights reserved
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet IXFT36N50P.PDF ] |
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IXFT36N50P | PolarHV HiPerFET Power MOSFET | IXYS |
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