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IXFH36N50P の電気的特性と機能

IXFH36N50PのメーカーはIXYSです、この部品の機能は「PolarHV HiPerFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFH36N50P
部品説明 PolarHV HiPerFET Power MOSFET
メーカ IXYS
ロゴ IXYS ロゴ 




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IXFH36N50P Datasheet, IXFH36N50P PDF,ピン配置, 機能
Advance Technical Information
PolarHVTM
HiPerFET
Power MOSFET
N-Channel Enhancement
ModeAvalanche Rated
Fast Intrinsic Diode
IXFH 36N50P
IXFT 36N50P
IXFV 36N50P
IXFV 36N50PS
V = 500 VDSS
www.DataSheet4U.com
ID25 = 36 A
=RDS(on) 170 mΩ
TO-247 AD (IXFH)
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/μs, VDD VDSS,
TJ 150°C, RG = 10 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
for 10s
Mounting torque(TO-247)
TO-247
TO-268
PLUS220
(TAB)
Maximum Ratings
500 V TO-268 (IXTT)
500 V
± 30
± 40
36
108
36
50
1.5
V
V
G
AS
A
A
mJ PLUS220 (IXFV)
J
10
540
-55 ... +150
150
-55 ... +150
300
260
V/ns
G
W DS
°C
°C PLUS220SMD (IXFV...S)
°C
°C
°C
D (TAB)
D (TAB)
1.13/10 Nm/lb.in.
6g
5g
2g
G
S
G = Gate
S = Source
D (TAB)
D = Drain
TAB = Drain
Features
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 4 mA
Characteristic Values
Min. Typ. Max.
500 V
VGS(th)
VDS = VGS, ID = 250μA
3.0 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 μA
250 μA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 μs, duty cycle d 2 %
170 mΩ
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99364D(10/05)

1 Page





IXFH36N50P pdf, ピン配列
36
32
28
24
20
16
12
8
4
0
0
36
32
28
24
20
16
12
8
4
0
0
Fig. 1. Output Characteristics
@ 25ºC
VGS = 10V
8V
7V
6V
5.5V
5V
123456
VD S - Volts
Fig. 3. Output Characteristics
@ 125ºC
VGS = 10V
7V
6V
7
5.5V
5V
4.5V
2 4 6 8 10 12 14 16
VD S - Volts
Fig. 5. RDS(on) Norm alized to
0.5 ID25 Value vs. ID
3.4
3 VGS = 10V
2.6 TJ = 125ºC
2.2
1.8
1.4
1 TJ = 25ºC
0.6
0 10 20 30 40 50 60 70 80
I D - Amperes
© 2005 IXYS All rights reserved
IXFH36N50P IXFT 36N50P
IXFV 36N50P
Fig. 2. Extended Output Cwhwawr.aDcattearShiseteict4sU.com
@ 25ºC
80
70 VGS = 10V
8V 7V
60
50 6.5V
40
30 6V
20
10 5.5V
5V
0
0 2 4 6 8 10 12 14 16 18 20 22 24
VD S - Volts
Fig. 4. RDS(on) Norm alize d to 0.5 ID25
Value vs. Junction Tem perature
3.1
2.8 VGS = 10V
2.5
2.2
1.9 ID = 36A
1.6
1.3 ID = 18A
1
0.7
0.4
-50 -25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case
Tem perature
40
35
30
25
20
15
10
5
0
-50 -25 0 25 50 75 100 125 150
TC - Degrees Centigrade


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部品番号部品説明メーカ
IXFH36N50P

PolarHV HiPerFET Power MOSFET

IXYS
IXYS


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