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PDF IXFH100N25P Data sheet ( Hoja de datos )
| Número de pieza | IXFH100N25P | |
| Descripción | PolarHT HiPerFET Power MOSFET | |
| Fabricantes | IXYS | |
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PolarHTTM
HiPerFET
Power MOSFET
For Plasma Display Applications
IXFH 100N25P
V=
DSS
ID25 =
RDS(on)
t
rr
=
≤
250 Vwww.DataSheet4U.com
100 A
27 mΩ
200 ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
ID(RMS)
I
DM
IAR
E
AR
EAS
dv/dt
PD
T
J
T
JM
Tstg
TL
M
d
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
External lead current limit
T
C
=
25°C,
pulse
width
limited
by
T
JM
TC = 25°C
T
C
= 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 4 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Maximum Ratings
250 V
250 V
TO-247 AD (IXTH)
±20 V
±30 V
100 A
D
75 A Features
250 A z International standard packages
60 A z Unclamped Inductive Switching (UIS)
60
mJ
rated
z Low package inductance
2.0 J - easy to drive and to protect
10
600
-55 ... +150
150
-55 ... +150
V/ns
W
°C
°C
°C
Advantages
z Easy to mount
z Space savings
300 °C
1.13/10 Nm/lb.in.
5.5 g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
250 V
V
GS(th)
V = V , I = 4 mA
DS GS D
2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
1 µA
200 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
27 mΩ
© 2005 IXYS All rights reserved
DS99344(02/05)
1 page  
1.00
0.10
0.01
1
Fig. 13. Maxim um Transient Therm al Resistance
IXFH 100N25P
www.DataSheet4U.com
10 100
Pulse Width - milliseconds
1000
© 2005 IXYS All rights reserved
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXFH100N25P.PDF ] | |
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