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PDF IXFR120N25P Data sheet ( Hoja de datos )
| Número de pieza | IXFR120N25P | |
| Descripción | PolarHT HiPerFET Power MOSFET | |
| Fabricantes | IXYS | |
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PolarHTTM HiPerFET IXFR 120N25P
Power MOSFET
Electrically Isolated Tab
N-Channel Enhancement Mode
Preliminary Data Sheet
V = 250 VDSS
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ID25 = 61 A
=RDS(on) 27 mΩ
Symbol
VDSS
VDGR
VDSS
VGSM
ID25
I
D(RMS)
IDM
IAR
EAR
E
AS
dv/dt
P
D
T
J
TJM
T
stg
T
L
VISOL
FC
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
TJ = 25°C to 175°C
TC = 25°C
External lead current limit
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
T
C
= 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 4 Ω
T
C
= 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
50/60 Hz, RMS, t = 1 minute
Mounting force
Maximum Ratings
250 V
250 V
ISOPLUS247 (IXFR)
E153432
±30 V
±20 V G
61
A
D
S
ISOLATED TAB
75
A G = Gate
D = Drain
300 A S = Source
60
60
2.5
10
250
-55 ... +150
150
-40 ... +125
300
260
A
mJ
J
V/ns
W
°C
°C
°C
°C
°C
Features
z International standard isolated package
z UL recognized package
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
2500
V~
20..120 / 4.5..25
N/lb
5g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
250 V
V
GS(th)
V = V , I = 4 mA
DS GS D
2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±200 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = IT
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
22 27 mΩ
© 2005 IXYS All rights reserved
DS99404(05/05)
1 page  
IXFR 120N25P
Fig. 13. Maximum Transient Thermal Resistance
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1.00
0.10
0.01
1
10 100
Pulse Width - milliseconds
1000
© 2005 IXYS All rights reserved
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXFR120N25P.PDF ] | |
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