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PDF IXTP5N60P Data sheet ( Hoja de datos )
| Número de pieza | IXTP5N60P | |
| Descripción | PolarHV Power MOSFET | |
| Fabricantes | IXYS | |
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Advance Technical Information
PolarHVTM
Power MOSFET
IXTA 5N60P
IXTP 5N60P
N-Channel Enhancement Mode
VDSS
= 600 Vwww.DataSheet4U.com
ID25 = 5 A
RDS(on) ≤ 1.6 W
TO-220 (IXTP)
Symbol
V
DSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
M
d
Weight
Test Conditions
T
J
= 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 10 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
TO-263 package for 10s
Mounting torque (TO-220)
TO-220
TO-263
Maximum Ratings
600 V
600 V
G DS
TO-263 (IXTA)
(TAB)
±30
±40
5
10
5
20
100
V
VG
S
A (TAB)
A
A G = Gate
mJ S = Source
mJ Features
D = Drain
TAB = Drain
10 V/ns
100
-55 ... +150
150
-55 ... +150
300
260
W
°C
°C
°C
°C
°C
1.13/10 Nm/lb.in.
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
4g
3g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
600 V
V
GS(th)
V
DS
=
V,
GS
I
D
=
100µA
3.0 5.0 V
IGSS VGS = ±30 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
V =0V
GS
T
J
=
125°C
5 µA
50 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.6 Ω
© 2005 IXYS All rights reserved
DS99426(07/05)
1 page  
Fig. 13. Maximum Transient Thermal Resistance
IXTA 5N60P
IXTP 5N60P
www.DataSheet4U.com
10.0
1.0
0.1
0.1
1 10 100
Pulse Width - milliseconds
1000
© 2005 IXYS All rights reserved
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| PDF Descargar | [ Datasheet IXTP5N60P.PDF ] | |
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