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IXTH30N50P PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTH30N50P
部品説明 PolarHV Power MOSFET
メーカ IXYS
ロゴ IXYS ロゴ 



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IXTH30N50P Datasheet, IXTH30N50P PDF,ピン配置, 機能
PolarHVTM Power
MOSFET
N-Channel Enhancement
ModeAvalanche Rated
Advance Technical Information
IXTH 30N50P
IXTT 30N50P
IXTQ 30N50P
IXTV 30N50P
IXTV 30N50PS
V = 500 VDSS
www.DataSheet4U.com
ID25 = 30 A
=RDS(on) 200 m
TO-3P (IXTQ)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 5
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
for 10s
Mounting torque (TO-247, TO-3P)
TO-247
TO-268
PLUS220, PLUS220SMD
TO-3P
Maximum Ratings
500 V
500 V G
±30 V
DS
±40 V TO-247 AD (IXTH)
30 A
75 A
30 A
40 mJ
1.2 J TO-268 (IXTT)
10 V/ns
(TAB)
(TAB)
460
-55 ... +150
150
-55 ... +150
300
260
W
G
S
°C
°C
°C PLUS220 (IXTV)
°C
°C
D (TAB)
1.13/10 Nm/lb.in.
6g
5g
4g
5.5 g
G
DS
PLUS220 SMD(IXTV..S)
D (TAB)
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
500
VGS(th)
VDS = VGS, ID = 250 µA
3.0
IGSS VGS = ±30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
165
© 2005 IXYS All rights reserved
V
5.0 V
±100 nA
25 µA
250 µA
200 m
G
S
G = Gate
S = Source
D (TAB)
D = Drain
TAB = Drain
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
DS99415(07/05)

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