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IXFR48N60PのメーカーはIXYSです、この部品の機能は「PolarHV HiPerFET Power MOSFET ISOPLUS247」です。 |
部品番号 | IXFR48N60P |
| |
部品説明 | PolarHV HiPerFET Power MOSFET ISOPLUS247 | ||
メーカ | IXYS | ||
ロゴ | |||
このページの下部にプレビューとIXFR48N60Pダウンロード(pdfファイル)リンクがあります。 Total 4 pages
Advance Technical Information
PolarHVTM HiPerFET
Power MOSFET
ISOPLUS247TM
IXFR 48N60P
N-Channel Enhancement
ModeAvalanche Rated
Fast Intrinsic Diode
(Electrically Isolated Back Surface)
VDSS
ID25
RDS(on)
trr
= 600 Vwww.DataSheet4U.com
= 32 A
≤ 160 mΩ
≤ 250 ns
Symbol
Test Conditions
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
VGSS
VGSM
Continuous
Transient
ID25 TC = 25°C
IDM TC = 25°C, pulse width limited by TJM
IAR TC = 25°C
EAR TC = 25°C
EAS TC = 25°C
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 4 Ω
PD TC = 25°C
TJ
TJM
Tstg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
VISOL
50/60 Hz, RMS, 1 minute
FC
Weight
Mounting Force
Maximum Ratings
600 V
600 V
ISOPLUS247 (IXFR)
E153432
±30 V
±40 V
G
32 A D S ISOLATED TAB
110 A
32
A
G = Gate
S = Source
D = Drain
70 mJ
2.0 J
20 V/ns Features
300
-55 ... +150
150
-55 ... +150
300
2500
20..120 / 4.5..26
5
W
°C
°C
°C
°C
V~
N/lb.
g
z International standard isolated
package
z UL recognized package
z Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
z Fast intrinsic diode
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 8 mA
IGSS VGS = ±30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = IT
Characteristic Values
Min. Typ. Max.
600 V
3.0 5.0 V
Advantages
z Easy to mount
z Space savings
z High power density
±200 nA
TJ = 125°C
25 µA
1000 µA
160 mΩ
© 2005 IXYS All rights reserved
DS99184(06/05)
1 Page 50
45
40
35
30
25
20
15
10
5
0
0
50
45
40
35
30
25
20
15
10
5
0
0
Fig. 1. Output Characteristics
@ 25ºC
VGS = 10V
8V
7V
6V
5V
12 345
VD S - Volts
Fig. 3. Output Characteristics
@ 125ºC
VGS = 10V
7V
6
6V
5V
2 4 6 8 10 12 14
VD S - Volts
Fig. 5. RDS(on) Norm alize d to
0.5 ID25 Value vs. ID
3.4
3.1 VGS = 10V
2.8
TJ = 125∫C
2.5
2.2
1.9
1.6
1.3
TJ = 25∫C
1
0.7
0
20 40 60 80 100 120
I D - Amperes
140
© 2005 IXYS All rights reserved
IXFR 48N60P
Fig. 2. Extended Output Cwhwawr.aDcattearSihseteict4sU.com
@ 25ºC
120 VGS = 10V
8V
100
80 7V
60
40
6V
20
5V
0
0 4 8 12 16 20 24
VD S - Volts
Fig. 4. RDS(on) Norm alize d to 0.5 ID25
Value vs. Junction Tem perature
3.1
2.8 VGS = 10V
2.5
2.2
1.9 ID = 48A
1.6
ID = 24A
1.3
1
0.7
0.4
-50 -25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
50
45
40
35
30
25
20
15
10
5
0
-50
Fig. 6. Drain Current vs. Case
Tem perature
-25 0 25 50 75 100 125
TC - Degrees Centigrade
150
3Pages | |||
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部品番号 | 部品説明 | メーカ |
IXFR48N60P | PolarHV HiPerFET Power MOSFET ISOPLUS247 | IXYS |