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Número de pieza | IXFV30N50P | |
Descripción | PolarHV Power HiPerFET MOSFET | |
Fabricantes | IXYS | |
Logotipo | ||
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No Preview Available ! Advance Technical Information
PolarHVTM Power
HiPerFET MOSFET
N-Channel Enhancement
ModeAvalanche Rated
Fast Intrinsic Diode
IXFH 30N50P
IXFT 30N50P
IXFQ 30N50P
IXFV 30N50P
IXFV 30N50PS
V = 500 VDSS
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ID25 = 30 A
=RDS(on) 200 mΩ
trr < 200 ns
TO-3P (IXFQ)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 5 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
for 10s
Mounting torque (TO-247, TO-3P)
TO-247
TO-268
PLUS220, PLUS220SMD
TO-3P
Maximum Ratings
500 V
500 V G
±30 V
DS
±40 V TO-247 AD (IXFH)
30 A
75 A
30 A
40 mJ
1.2 J TO-268 (IXFT)
10 V/ns
(TAB)
(TAB)
460
-55 ... +150
150
-55 ... +150
300
260
W
G
S
°C
°C
°C PLUS220 (IXFV)
°C
°C
D (TAB)
1.13/10 Nm/lb.in.
6g
5g
4g
5.5 g
G
DS
PLUS220 SMD(IXFV..S)
D (TAB)
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
500
VGS(th)
VDS = VGS, ID = 4 mA
3.0
IGSS VGS = ±30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
165
© 2005 IXYS All rights reserved
V
5.0 V
±100 nA
25 µA
250 µA
200 mΩ
G
S
G = Gate
S = Source
D (TAB)
D = Drain
TAB = Drain
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
DS99414(06/05)
1 page Package Outline Drawings
TO-247 AD (IXFH) Outline
IXFH 30N50P IXFQ 30N50P IXFT 30N50P
IXFV 30N50P IXFV 30N50PS
TO-3P (IXTQ) Outline
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TO-268 (IXTT) Outline
123
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
∅P
Q
R
S
Millimeter
Min. Max.
4.7 5.3
2.2 2.54
2.2 2.6
1.0 1.4
1.65 2.13
2.87 3.12
.4
20.80
15.75
.8
21.46
16.26
5.20
19.81
5.72
20.32
4.50
3.55 3.65
5.89 6.40
4.32 5.49
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205
.780
0.225
.800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
PLUS220 (IXFV) Outline
E
E1
L2
A
A1
E1
D
L3
L1
L
D1
2X e
3X b
c
A2
Terminals: 1-Gate 2-Drain
A
A1
A2
b
c
D
D1
E
E1
e
L
L1
L2
L3
© 2005 IXYS All rights reserved
EA
E1 L2 A1
E1
D
A3
L3
L
L1
2X b
e
c
A2
L4
Terminals: 1-Gate 2-Drain
A
A1
A2
A3
b
c
D
D1
E
E1
e
L
L1
L2
L3
L4
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet IXFV30N50P.PDF ] |
Número de pieza | Descripción | Fabricantes |
IXFV30N50P | PolarHV Power HiPerFET MOSFET | IXYS |
IXFV30N50PS | PolarHV Power HiPerFET MOSFET | IXYS |
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