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IXFX80N50PのメーカーはIXYSです、この部品の機能は「PolarHV HiPerFET Power MOSFET」です。 |
部品番号 | IXFX80N50P |
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部品説明 | PolarHV HiPerFET Power MOSFET | ||
メーカ | IXYS | ||
ロゴ | |||
このページの下部にプレビューとIXFX80N50Pダウンロード(pdfファイル)リンクがあります。 Total 5 pages
PolarHVTM
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Advance Technical Information
IXFK 80N50P
IXFX 80N50P
VDSS
= 500 Vwww.DataSheet4U.com
ID25 = 80 A
<RDS(on) 65 mΩ
trr < 200 ns
Symbol
Test Conditions
TO-264 AA (IXFK)
Maximum Ratings
VDSS
VDGR
VGSM
VGSM
ID25
IILDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Transient
Continuous
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 10 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
500
500
± 40
± 30
80
75
200
80
80
305
10
1040
-55 ... +150
150
-55 ... +150
300
260
V
V
V
VG
D
AS
A
A PLUS247
(IXFX)
A
mJ
J
V/ns
D (TAB)
D
WS
D (TAB)
°C
°C
°C G = Gate
S = Source
°C D = Drain Tab = Collector
°C
FC
Md
Weight
Mounting force
Mounting torque (TO-264)
TO-264
PLUS247
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
VDSS
VGS = 0 V, ID = 500 μA
VGS(th)
VDS = VGS, ID = 8 mA
IGSS VGS = ± 30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 ID25
TJ = 125°C
20..120/4.5..25
N/lb
1.13/10 Nm/lb.in.
10 g
6g
Characteristic Values
Min. Typ.
Max.
500 V
3.0 5.0 V
± 200 nA
25 μA
1 mA
65 mΩ
Features
z International standard package
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99437(09/05)
1 Page Fig. 1. Output Characteristics
@ 25°C
80
VGS = 10V
70 8V
60 7V
50
40
30
20
10
0
0
80
70
60
50
6V
5V
12 345
VD S - Volts
Fig. 3. Output Characteristics
@ 125°C
VGS = 10V
7V
6V
6
40
30
20
5V
10
0
0 2 4 6 8 10 12 14
VD S - Volts
3. 2
3
2. 8
2. 6
2. 4
2. 2
2
1. 8
1. 6
1. 4
1. 2
1
0. 8
0
Fig. 5. RDS(on) Norm alize d to
0.5 ID25 Value vs. ID
VGS = 10V
TJ = 125°C
TJ = 25°C
20 40 60 80 100 120 140 160 180
I D - Amperes
© 2005 IXYS All rights reserved
IXFK 80N50P
IXFX 80N50P
Fig. 2. Extended Output Cwwhawr.DacattaeSrhiseetitc4sU.com
@ 25°C
180
160
VGS = 10V
8V
140
120
7V
100
80
60
6V
40
20
5V
0
0 3 6 9 12 15 18 21 24 27
VD S - Volts
Fig. 4. RDS(on) Norm alize d to 0.5 ID25
Value vs. Junction Tem perature
3.4
3.1 VGS = 10V
2.8
2.5
2.2
1.9 ID = 80A
1.6
1.3 ID = 40A
1
0.7
0.4
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case
Tem perature
90
80
70
60
50
40
30
20
10
0
-50
-25
0 25 50 75 100 125 150
TC - Degrees Centigrade
3Pages | |||
ページ | 合計 : 5 ページ | ||
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部品番号 | 部品説明 | メーカ |
IXFX80N50P | PolarHV HiPerFET Power MOSFET | IXYS |
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