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PDF IXFK80N50P Data sheet ( Hoja de datos )
| Número de pieza | IXFK80N50P | |
| Descripción | PolarHV HiPerFET Power MOSFET | |
| Fabricantes | IXYS | |
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PolarHVTM
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Advance Technical Information
IXFK 80N50P
IXFX 80N50P
VDSS
= 500 Vwww.DataSheet4U.com
ID25 = 80 A
<RDS(on) 65 mΩ
trr < 200 ns
Symbol
Test Conditions
TO-264 AA (IXFK)
Maximum Ratings
VDSS
VDGR
VGSM
VGSM
ID25
IILDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Transient
Continuous
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 10 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
500
500
± 40
± 30
80
75
200
80
80
305
10
1040
-55 ... +150
150
-55 ... +150
300
260
V
V
V
VG
D
AS
A
A PLUS247
(IXFX)
A
mJ
J
V/ns
D (TAB)
D
WS
D (TAB)
°C
°C
°C G = Gate
S = Source
°C D = Drain Tab = Collector
°C
FC
Md
Weight
Mounting force
Mounting torque (TO-264)
TO-264
PLUS247
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
VDSS
VGS = 0 V, ID = 500 μA
VGS(th)
VDS = VGS, ID = 8 mA
IGSS VGS = ± 30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 ID25
TJ = 125°C
20..120/4.5..25
N/lb
1.13/10 Nm/lb.in.
10 g
6g
Characteristic Values
Min. Typ.
Max.
500 V
3.0 5.0 V
± 200 nA
25 μA
1 mA
65 mΩ
Features
z International standard package
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99437(09/05)
1 page  
1.000
0.100
0.010
0.001
0.0001
Fig. 13. Maxim um Transient Therm al Resistance
IXFK 80N50P
IXFX 80N50P
www.DataSheet4U.com
0.001
0.01
0.1
Pulse Width - Seconds
1
10
© 2005 IXYS All rights reserved
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXFK80N50P.PDF ] | |
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