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PDF IXGT25N160 Data sheet ( Hoja de datos )
| Número de pieza | IXGT25N160 | |
| Descripción | High Voltage IGBT | |
| Fabricantes | IXYS | |
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High Voltage IGBT
For Capacitor Discharge
Applications
Preliminary Data Sheet
IXGH 25N160
IXGT 25N160
www.DataSheet4U.com
V = 1600 V
I CES = 75 A
VC25 = 2.5 V
CE(sat)
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
VGES
VGEM
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
1600
1600
± 20
± 30
IC25
IC110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TC = 25°C
TC = 110°C
TC = 25°C, VGE = 20 V, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 20 Ω
Clamped inductive load
TC = 25°C
75
25
200
ICM = 100
@ 0.8 VCES
300
-55 ... +150
150
-55 ... +150
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
300
260
V
V
V
V
A
A
A
A
W
°C
°C
°C
°C
°C
Md
Weight
Mounting torque (TO-247)
TO-247
TO-268
1.13/10 Nm/lb-in
6g
4g
Symbol
BVGVEC(tEhS)
ICES
IGES
VCE(sat)
Test Conditions
Characteristic Values
(TJ
=
25°C
unless
min.
otherwise specified)
typ. max.
IC = 250 μA, VGE = 0 V
IC = 250 μA, VCE = VGE
VCE = 0.8 • VCES
VGE = 0 V
VCE = 0 V, VGE = ±30 V
IC = IC110, VGE = 15 V
IC = 100 A, VGE = 20 V
TJ = 125°C
1600
3.0
V
5.0 V
50 μA
1 mA
±100 nA
2.5 V
4.7 V
TO-247 (IXGH)
G
CE
TO-268 (IXGT)
C (TAB)
G
E
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
High peak current capability
Low saturation voltage
MOS Gate turn-on
-drive simplicity
Rugged NPT structure
International standard packages
- JEDEC TO-268 and
- JEDEC TO-247 AD
Molding epoxies meet UL 94 V-0
flammability classification
Applications
Capacitor discharge
Pulser circuits
Advantages
High power density
Suitable for surface mounting
Easy to mount with 1 screw,
(isolated mounting screw hole)
© 2005 IXYS All rights reserved
DS99381(12/05)
1 page  
Fig. 13. Resistive Turn-Off Switching Times
vs. Gate Resistance
1000
450
t f td(off) - - - -
900 TJ = 125ºC, VGE = 15V
400
800 VCE = 1200V
350
700 I C = 50A
300
600 250
500 200
400 150
I C = 150A, 100A
300 100
200 50
10 15 20 25 30 35 40 45 50
RG - Ohms
IXGH 25N160
IXGT 25N160
www.DataSheet4U.com
Fig. 14. Gate Charge
16
14 VCE = 800V
I C = 50A
12 I G = 10 mA
10
8
6
4
2
0
0 10 20 30 40 50 60 70 80 90
QG - NanoCoulombs
Fig. 15. Reverse-Bias Safe Operating Area
110
100
90
80
70
60
50
40
30 TJ = 125ºC
20 RG = 20Ω
10 dV / dT < 10V / ns
0
200 400 600
800 1000
VCE - Volts
1200
1400
1600
10,000
Fig. 16. Capacitance
f = 1 MHz
Cies
1,000
Coes
100
10
0
Cres
5 10 15 20 25 30 35 40
VCE - Volts
Fig. 17. Maximum Transient Thermal Resistance
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2005 IXYS All rights reserved
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXGT25N160.PDF ] | |
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