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IXGH25N160 の電気的特性と機能

IXGH25N160のメーカーはIXYSです、この部品の機能は「High Voltage IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXGH25N160
部品説明 High Voltage IGBT
メーカ IXYS
ロゴ IXYS ロゴ 




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IXGH25N160 Datasheet, IXGH25N160 PDF,ピン配置, 機能
High Voltage IGBT
For Capacitor Discharge
Applications
Preliminary Data Sheet
IXGH 25N160
IXGT 25N160
www.DataSheet4U.com
V = 1600 V
I CES = 75 A
VC25 = 2.5 V
CE(sat)
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
VGES
VGEM
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
1600
1600
± 20
± 30
IC25
IC110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TC = 25°C
TC = 110°C
TC = 25°C, VGE = 20 V, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 20 Ω
Clamped inductive load
TC = 25°C
75
25
200
ICM = 100
@ 0.8 VCES
300
-55 ... +150
150
-55 ... +150
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
300
260
V
V
V
V
A
A
A
A
W
°C
°C
°C
°C
°C
Md
Weight
Mounting torque (TO-247)
TO-247
TO-268
1.13/10 Nm/lb-in
6g
4g
Symbol
BVGVEC(tEhS)
ICES
IGES
VCE(sat)
Test Conditions
Characteristic Values
(TJ
=
25°C
unless
min.
otherwise specified)
typ. max.
IC = 250 μA, VGE = 0 V
IC = 250 μA, VCE = VGE
VCE = 0.8 • VCES
VGE = 0 V
VCE = 0 V, VGE = ±30 V
IC = IC110, VGE = 15 V
IC = 100 A, VGE = 20 V
TJ = 125°C
1600
3.0
V
5.0 V
50 μA
1 mA
±100 nA
2.5 V
4.7 V
TO-247 (IXGH)
G
CE
TO-268 (IXGT)
C (TAB)
G
E
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
High peak current capability
Low saturation voltage
MOS Gate turn-on
-drive simplicity
Rugged NPT structure
International standard packages
- JEDEC TO-268 and
- JEDEC TO-247 AD
Molding epoxies meet UL 94 V-0
flammability classification
Applications
Capacitor discharge
Pulser circuits
Advantages
High power density
Suitable for surface mounting
Easy to mount with 1 screw,
(isolated mounting screw hole)
© 2005 IXYS All rights reserved
DS99381(12/05)

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IXGH25N160 pdf, ピン配列
Fig. 1. Output Characteristics
@ 25ºC
150
VGE = 25V
20V
125
100
15V
75
10V
50
25
0
0
150
125
100
12 34 5
VCE - Volts
Fig. 3. Output Characteristics
@ 125ºC
VGE = 25V
20V
15V
6
75
10V
50
25
0
012345678
VCE - Volts
10
9
8
7
6
5
4
3
2
7
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
I C = 150A
100A
50A
TJ = 25ºC
9 11 13 15 17 19 21 23 25
VGE - Volts
© 2005 IXYS All rights reserved
275
250
225
200
175
150
125
100
75
50
25
0
0
IXGH 25N160
IXGT 25N160
Fig. 2. Exteded Output Charwawctwe.rDisattiacsSheet4U.com
@ 25ºC
VGE = 25V
20V
15V
10V
2 4 6 8 10 12 14 16 18 20
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
2.1
VGE = 15V
1.9
1.7 I C = 150A
1.5
1.3
I C = 100A
1.1
0.9
I C = 50A
0.7
0.5
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Input Admittance
200
180
160 TJ = - 40ºC
140
25ºC
125ºC
120
100
80
60
40
20
0
4 5 6 7 8 9 10 11 12 13 14 15
VGE - Volts


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部品番号部品説明メーカ
IXGH25N160

High Voltage IGBT

IXYS
IXYS


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