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PDF IXGK120N60C2 Data sheet ( Hoja de datos )
| Número de pieza | IXGK120N60C2 | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
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Preliminary Technical Information
HiPerFASTTM IGBT IXGK120N60C2
Lightspeed 2TM Series
IXGX120N60C2
VCES = 600V
IC110 = 120A
VCE(sat) ≤ 2.5V
tfi(typ) = 80ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
Md
FC
TL
TSOLD
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C (limited by leads)
TC = 110°C (chip capability)
TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 1Ω
Clamped inductive load @ VCE ≤ 600V
TC = 25°C
Mounting torque (TO-264)
Mounting force (PLUS247)
Maximum lead temperature for soldering
Plastic body for 10 seconds
TO-264
PLUS247
Maximum Ratings
600
600
± 20
± 30
75
120
500
ICM = 200
V
V
V
V
A
A
A
A
830
-55 ... +150
150
-55 ... +150
1.13 / 10
20..120/4.5..27
300
260
10
6
W
°C
°C
°C
Nm/lb.in
N/lb
°C
°C
g
g
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVCES
VGE(th)
IC = 1mA, VGE = 0V
IC = 500μA, VCE = VGE
ICES
VCE = VCES
VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ± 20V
VCE(sat)
IC = 100A, VGE = 15V, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
600 V
3.0 5.5 V
100 μA
2 mA
± 200 nA
2.1 2.5 V
1.6 V
TO-264(IXGK)
G
CE
PLUS247(IXGX)
(TAB)
G
CE
(TAB)
G = Gate
C = Collector
E = Emitter TAB = Collector
Features
z Very high frequency IGBT
z Square RBSOA
z High current handling capability
z MOS Gate turn-on
- drive simplicity
Applications
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
z AC motor speed control
z DC servo and robot drives
z DC choppers
Advantages
z High power density
z Very fast switching speeds for high
frequency applications
z High power surface mountable
packages
© 2007 IXYS CORPORATION,All rights reserved
DS99515A(11/07)
1 page  
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
Eoff Eon - - - -
TJ = 125ºC , VGE = 15V
VCE = 400V
I C = 120A
I C = 80A
23456789
RG - Ohms
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
10
Fig. 14. Inductive Swiching
Energy Loss vs. Junction Temperature
3.2 4.5
2.8 4.0
2.4
2.0 Eoff
Eon - - - -
RG = 1Ω , VGE = 15V
1.6 VCE = 400V
I C = 120A
3.5
3.0
2.5
1.2 2.0
0.8
I C = 80A
1.5
0.4 1.0
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
220
200 t f
td(off) - - - -
180
160
RG = 1Ω , VGE = 15V
VCE = 400V
210
200
190
180
140 170
120 TJ = 125ºC
100
160
150
80 140
60
TJ = 25ºC
130
40 120
20 110
0 100
40 50 60 70 80 90 100 110 120
IC - Amperes
© 2007 IXYS CORPORATION,All rights reserved
IXGK120N60C2
IXGX120N60C2
Fig. 13. Inductive Swiching
Energy Loss vs. Collector Current
3.6
3.2 Eoff
Eon - - - -
RG = 1Ω , VGE = 15V
2.8 VCE = 400V
TJ = 125ºC, 25ºC
2.4
2.0
1.6
1.2
0.8
0.4
0.0
40 50 60 70 80 90 100 110
IC - Amperes
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
120
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
240 500
220 t f
td(off) - - - -
TJ = 125ºC, VGE = 15V
200 VCE = 400V
450
400
180 350
I C = 120A
160 300
140
120 I C = 80A
250
200
100 150
80 100
1 2 3 4 5 6 7 8 9 10
RG - Ohms
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
200 180
175 t f
td(off) - - - -
RG = 1Ω , VGE = 15V
150 VCE = 400V
170
160
I C = 120A
125
150
100 140
75 130
I C = 80A
50 120
25 110
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXGK120N60C2.PDF ] | |
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