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PDF IXFT44N50P Data sheet ( Hoja de datos )
| Número de pieza | IXFT44N50P | |
| Descripción | PolarHV HiPerFET Power MOSFET | |
| Fabricantes | IXYS | |
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PolarHVTM
HiPerFET
Power MOSFET
N-Channel Enhancement
ModeAvalanche Rated
Fast Intrinsic Diode
Advance Technical Information
www.DataSheet4U.com
IXFH 44N50P
IXFT 44N50P
IXFK 44N50P
VDSS =
ID25 =
<RDS(on)
trr <
500 V
44 A
140 mΩ
200 ns
Symbol
Test Conditions
Maximum Ratings
VDSS
V
DGR
TJ = 25°C to 175°C
T
J
=
25°C
to
175°C;
R
GS
=
1
MΩ
500 V TO-247 AD (IXFH)
500 V
VGSM
VGSM
Transient
Continuous
±40 V
±30 V
(TAB)
ID25 TC = 25°C
IDM TC = 25°C, pulse width limited by TJM
IAR TC = 25°C
EAR TC = 25°C
EAS TC = 25°C
44 A
132 A
44 A
55 mJ
1.7 J
dv/dt
PD
TJ
TJM
Tstg
TL
I
S
≤
I,
DM
di/dt
≤
100
A/µs,
V
DD
≤
V,
DSS
TJ ≤ 150°C, RG = 10 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
for 10s
10
650
-55 ... +150
150
-55 ... +150
300
260
V/ns
W
°C
°C
°C
°C
°C
Md Mounting torque(TO-247)
Weight
TO-247
TO-268
TO-264
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
1.13/10 Nm/lb.in.
6g
5g
10 g
Characteristic Values
Min. Typ. Max.
500 V
TO-268 (IXTT)
G
S
TO-264 (IXTK)
D (TAB)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
V
GS(th)
IGSS
IDSS
RDS(on)
V = V , I = 4 mA
DS GS D
3.0
VGS = ±30 VDC, VDS = 0
VDS = VDSS
V =0V
GS
T
J
=
125°C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
5.0 V
±10 nA
25 µA
500 µA
140 mΩ
Advantages
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99364(03/05)
1 page  
IXFH44N50P IXFT 44N50P
wIXwwF.DKata4Sh4eeNt45U.0coPm
Fig. 13. Maximum Transient Thermal Resistance
1.00
0.10
0.01
0.1
1 10 100
PulseWidth- milliseconds
1000
© 2005 IXYS All rights reserved
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXFT44N50P.PDF ] | |
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