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PDF IXFR102N30P Data sheet ( Hoja de datos )
| Número de pieza | IXFR102N30P | |
| Descripción | Polar HiPerFET Power MOSFET | |
| Fabricantes | IXYS | |
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Advanced Technical Information
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PolarHTTMHiPerFET IXFR 102N30P
Power MOSFET
N-Channel Enhancement Mode
Fast Intrinsic Diode
V = 300 V
DSS
ID25 = 60 A
=RDS(on) 36 mΩ
trr ≤ 200 ns
Symbol
VDSS
VDGR
VGS
V
GSM
I
D25
IDM
IAR
EAR
EAS
dv/dt
P
D
T
J
TJM
T
stg
T
L
VISOL
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
T
C
= 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 4 Ω
T
C
= 25°C
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, 1 minute
Mounting force
Maximum Ratings
300 V ISOPLUS247 (IXFR)
E153432
300 V
±20 V
±30 V
60 A
250 A
G
DS
60
60
2.5
10
300
-55 ... +150
150
-55 ... +150
300
2500
22..130/5..29
5
A
mJ
J
V/ns
W
°C
°C
°C
°C
V~
N/lb
g
G = Gate
S = Source
Features
D = Drain
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
300 V
V
GS(th)
V = V , I = 4 mA
DS GS D
2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±200 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 51 A
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
36 m Ω
© 2005 IXYS All rights reserved
DS99247(03/05)
1 page  
1.00
0.10
0.01
1
IXFR 102N30P
www.DataSheet4U.com
Fig. 13. M axim um Tr ans ie nt The r m al Re s is tance
10 100
Pulse Width - milliseconds
1000
© 2005 IXYS All rights reserved
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| PDF Descargar | [ Datasheet IXFR102N30P.PDF ] | |
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