|
|
Número de pieza | IXFK200N10P | |
Descripción | Polar HiPerFET Power MOSFET | |
Fabricantes | IXYS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IXFK200N10P (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! PolarTM HiPerFET
Power MOSFET
Advanced Technical Information
www.DataSheet4U.com
IXFN 200N10P
IXFK 200N10P
IXFX 200N10P
V=
DSS
ID25 =
=RDS(on)
100 V
200 A
7.5 mΩ
N-Channel Enhancement Mode
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
VGS
VGSM
ID25
ID(RMS)
I
DM
IAR
EAR
EAS
T
J
= 25°C to 175°C
T
J
=
25°C
to
175°C;
R
GS
=
1
MΩ
TC = 25°C
External lead current limit
T
C
=
25°C,
pulse
width
limited
by
T
JM
TC = 25°C
TC = 25°C
TC = 25°C
100 V
100 V
±20 V
±30 V
200 A
100 A
400 A
60 A
100 mJ
4J
dv/dt
P
D
TJ
TJM
T
stg
V
ISOL
Md
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 4 Ω
T
C
= 25°C
50/60 Hz, RMS, 1 minute
Mounting torque
Terminal torque
10 V/ns
800
-55 ... +175
175
-55 ... +150
W
°C
°C
°C
2500
V~
1.13/10 Nm/lb.in.
1.13/10 Nm/lb.in.
Weight
SOT-227B
TO-264
PLUS247
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
V
DSS
V
GS
=
0
V,
I
D
=
250
µA
30 g
10 g
6g
Characteristic Values
Min. Typ. Max.
100 V
VGS(th)
VDS = VGS, ID = 500µA
3.0 5.0 V
I
GSS
V
GS
=
±30
V,
DC
V
DS
=
0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
V =0V
GS
TJ = 150°C
T
J
=
175°C
25
250
1000
µA
µA
µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
VGS = 15 V, ID = 400A
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
7.5 mΩ
5.5 mΩ
© 2005 IXYS All rights reserved
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
G = Gate
S = Source
D
D = Drain
S
Either Source terminal S can be used as
the Source terminal or the Kelvin Source
(gate return) terminal.
TO-264 AA (IXFK)
G
D
S
PLUS247
(IXGX)
D (TAB)
G = Gate
E = Emitter
C
E
C = Collector
Tab = Collector
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
DS99239B(03/05)
1 page 1.00
0.10
0.01
0.00
0.1
IXFK 200N10P IXFX 200N10P
IXwwFwN.Da2ta0S0heNet41U.0coPm
Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce
1 10 100
Pu ls e W id th - m illis e c o n d s
1000
© 2005 IXYS All rights reserved
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet IXFK200N10P.PDF ] |
Número de pieza | Descripción | Fabricantes |
IXFK200N10P | Polar HiPerFET Power MOSFET | IXYS |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |