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IXTV22N50P PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTV22N50P
部品説明 PolarHV Power MOSFET
メーカ IXYS
ロゴ IXYS ロゴ 



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IXTV22N50P Datasheet, IXTV22N50P PDF,ピン配置, 機能
PolarHVTM
Power MOSFET
N-Channel Enhancement Mode
Advance Technical Information
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IXTQ 22N50P
IXTV 22N50P
IXTV 22N50PS
VDSS =
ID25 =
=RDS(on)
500 V
22 A
270 m
Symbol
VDSS
VDGR
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 10
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
for 10s
Mounting torque
TO-3P
PLUS220 & PLUS220SMD
Maximum Ratings
TO-3P (IXTQ)
500 V
500 V
±30 V
G
22 A
DS
66 A
22 A
30 mJ
750 mJ PLUS220 (IXFV)
10 V/ns
(TAB)
350
-55 ... +150
150
-55 ... +150
300
260
WG
°C D S
°C
°C PLUS220SMD (IXFV-PS)
°C
°C
D (TAB)
1.13/10 Nm/lb.in.
5.5 g
4g
G
S
D (TAB)
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
500 V
VGS(th)
VDS = VGS, ID = 250µA
3.0 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±10 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
5 µA
50 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
270 m
G = Gate
S = Source
Features
D = Drain
TAB = Drain
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99351A(03/05)

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