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IXTH30N60P PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTH30N60P
部品説明 PolarHV Power MOSFET
メーカ IXYS
ロゴ IXYS ロゴ 



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IXTH30N60P Datasheet, IXTH30N60P PDF,ピン配置, 機能
PolarHVTM
Power MOSFET
N-Channel Enhancement Mode
Fast Recovery Diode
Avalanche Rated
Advanced Technical Information
www.DataSheet4U.com
IXTH 30N60P
IXTQ 30N60P
IXTT 30N60P
IXTV 30N60P
IXTV 30N60PS
VDSS = 600 V
ID25 = 30 A
RDS(on) 240 m
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TO-247 (IXFH)
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
600 V
600 V
±30 V
±40 V
G
DS
TO-3P (IXTQ)
30 A
80 A
30 A
50 mJ G
1.5 J
DS
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 4
TC = 25°C
10
500
-55 ... +150
150
-55 ... +150
1.6 mm (0.062 in.) from case for 10 seconds
Plastic body FOR 10 seconds
300
260
V/ns
PLUS220 (IXFV)
W
°C
°C
°C
G
DS
°C PLUS220 (IXFV...S)
°C
Mounting torque (TO-3P)
1.13/10 Nm/lb.in.
TO-247
TO-3P
PLUS220
TO-268
6.0 g
5.5 g
4.0 g
G
S
5.0 g TO-268 (IXTT)
D (TAB)
D (TAB)
D (TAB)
D (TAB)
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
600 V
VGS(th)
VDS = VGS, ID = 250µA
2.5 5.0 V
IGSS VGS = ±30 V, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
240 m
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z Fast Recovery diode
z Unclamped Inductive Switching (UIS)
rated
z International standard packages
z Low package inductance
- easy to drive and to protect
© 2005 IXYS All rights reserved
DS99251B(02/05)

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