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PDF IXTQ16N50P Data sheet ( Hoja de datos )
| Número de pieza | IXTQ16N50P | |
| Descripción | PolarHV Power MOSFET | |
| Fabricantes | IXYS | |
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PolarHVTM
Power MOSFET
N-Channel Enhancement Mode
Advanced Technical Information
www.DataSheet4U.com
IXTA 16N50P
IXTP 16N50P
IXTQ 16N50P
VDSS =
ID25 =
=RDS(on)
500 V
16 A
400 mΩ
Symbol
VDSS
VDGR
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 10 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
TO-263 package for 10s
Mounting torque (TO-220)
TO-220
TO-263
TO-3P
Maximum Ratings
500 V
500 V
TO-220 (IXTP)
±30
16
48
16
25
1000
V
A
A
G DS
A TO-263 (IXTA)
mJ
mJ
(TAB)
10
300
-55 ... +150
150
-55 ... +150
V/ns
G
S
W TO-3P (IXTQ)
°C
°C
°C
(TAB)
300 °C
260 °C
1.13/10 Nm/lb.in.
G
DS
(TAB)
4g
3
g G = Gate
D = Drain
5.5
g S = Source
TAB = Drain
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
500 V
VGS(th)
VDS = VGS, ID = 250µA
3.0 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±10 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
5 µA
50 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
400 mΩ
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99323(02/05)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXTQ16N50P.PDF ] | |
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