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IRFSL3307ZPBF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRFSL3307ZPBF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



Total 11 pages
		

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IRFSL3307ZPBF Datasheet, IRFSL3307ZPBF PDF,ピン配置, 機能
Applications
l High Efficiency Synchronous Rectification in
SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
PD - 97214D
IRFB3307ZPbF
IRFS3307ZPbF
IRFSL3307ZPbF
HEXFET® Power MOSFET
D VDSS
75V
RDS(on) typ.
4.6mΩ
cmax.
5.8mΩ
G
ID (Silicon Limited)
128A
S ID (Package Limited)
120A
D DD
S
D
G
TO-220AB
IRFB3307ZPbF
S
G
D2Pak
IRFS3307ZPbF
S
D
G
TO-262
IRFSL3307ZPbF
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
dPulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
eSingle Pulse Avalanche Energy
ÃdAvalanche Current
gRepetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
Parameter
kJunction-to-Case
RθCS
RθJA
RθJA
Case-to-Sink, Flat Greased Surface , TO-220
kJunction-to-Ambient, TO-220
jkJunction-to-Ambient (PCB Mount) , D2Pak
Max.
™128
90™
120
512
230
1.5
± 20
6.7
-55 to + 175
300
x x10lbf in (1.1N m)
140
See Fig. 14, 15, 22a, 22b
Typ.
–––
0.50
–––
–––
Max.
0.65
–––
62
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
www.irf.com
1
08/19/11

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