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IRFB3307ZPBF の電気的特性と機能

IRFB3307ZPBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFB3307ZPBF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFB3307ZPBF Datasheet, IRFB3307ZPBF PDF,ピン配置, 機能
Applications
l High Efficiency Synchronous Rectification in
SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
PD - 97214D
IRFB3307ZPbF
IRFS3307ZPbF
IRFSL3307ZPbF
HEXFET® Power MOSFET
D VDSS
75V
RDS(on) typ.
4.6mΩ
cmax.
5.8mΩ
G
ID (Silicon Limited)
128A
S ID (Package Limited)
120A
D DD
S
D
G
TO-220AB
IRFB3307ZPbF
S
G
D2Pak
IRFS3307ZPbF
S
D
G
TO-262
IRFSL3307ZPbF
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
dPulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
eSingle Pulse Avalanche Energy
ÃdAvalanche Current
gRepetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
Parameter
kJunction-to-Case
RθCS
RθJA
RθJA
Case-to-Sink, Flat Greased Surface , TO-220
kJunction-to-Ambient, TO-220
jkJunction-to-Ambient (PCB Mount) , D2Pak
Max.
™128
90™
120
512
230
1.5
± 20
6.7
-55 to + 175
300
x x10lbf in (1.1N m)
140
See Fig. 14, 15, 22a, 22b
Typ.
–––
0.50
–––
–––
Max.
0.65
–––
62
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
www.irf.com
1
08/19/11

1 Page





IRFB3307ZPBF pdf, ピン配列
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
10
4.5V
1
0.1
60μs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
TJ = 175°C
10
TJ = 25°C
IRFB/S/SL3307ZPbF
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
4.5V
10
1
0.1
60μs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
2.5
ID = 72A
VGS = 10V
2.0
1.5
1
VDS = 25V
60μs PULSE WIDTH
0.1
2345678
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
100
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
www.irf.com
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
12.0
10.0
ID= 72A
8.0
VDS= 60V
VDS= 38V
VDS= 15V
6.0
4.0
2.0
0.0
0 10 20 30 40 50 60 70 80 90
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3


3Pages


IRFB3307ZPBF 電子部品, 半導体
IRFB/S/SL3307ZPbF
4.5
4.0
3.5
3.0
2.5
2.0 ID = 150μA
ID = 250μA
1.5 ID = 1.0mA
1.0 ID = 1.0A
0.5
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 16. Threshold Voltage vs. Temperature
20
IF = 72A
VR = 64V
15 TJ = 25°C
TJ = 125°C
10
5
20
IF = 48A
VR = 64V
15 TJ = 25°C
TJ = 125°C
10
5
0
0 200 400 600 800 1000
diF /dt (A/μs)
Fig. 17 - Typical Recovery Current vs. dif/dt
420
IF = 48A
340
VR = 64V
TJ = 25°C
TJ = 125°C
260
180
100
0
0 200 400 600 800 1000
diF /dt (A/μs)
Fig. 18 - Typical Recovery Current vs. dif/dt
420
IF = 72A
340
VR = 64V
TJ = 25°C
TJ = 125°C
260
20
0
200 400 600 800 1000
diF /dt (A/μs)
Fig. 19 - Typical Stored Charge vs. dif/dt
180
100
20
0
200 400 600 800 1000
diF /dt (A/μs)
Fig. 20 - Typical Stored Charge vs. dif/dt
6 www.irf.com

6 Page



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共有リンク

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部品番号部品説明メーカ
IRFB3307ZPBF

HEXFET Power MOSFET

International Rectifier
International Rectifier


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