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PDF MRF18090B Data sheet ( Hoja de datos )
| Número de pieza | MRF18090B | |
| Descripción | LATERAL N-CHANNEL RF POWER MOSFETs | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF18090B/D
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for GSM and EDGE base station applications with frequencies from
1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in class AB for GSM and EDGE cellular radio
applications.
• GSM and EDGE Performances, Full Frequency Band
Power Gain — 13.5 dB (Typ) @ 90 Watts (CW)
Efficiency — 45% (Typ) @ 90 Watts (CW)
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
www.Dat•aShCeaept4aUb.lceoomf Handling 10:1 VSWR, @ 26 Vdc, 90 Watts (CW) Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
MRF18090B
MRF18090BS
1.90 – 1.99 GHz, 90 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETS
CASE 465B–03, STYLE 1
(NI–880)
(MRF18090B)
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
CASE 465C–02, STYLE 1
(NI–880S)
(MRF18090BS)
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Value
65
+15, –0.5
250
1.43
–65 to +200
200
Class
2 (Minimum)
M3 (Minimum)
Max
0.7
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 3
© MMoOtoTroOla,RInOc.L2A00R2 F DEVICE DATA
MRF18090B MRF18090BS
1
1 page  
TYPICAL CHARACTERISTICS
16
IDQ = 1000 mA
15
750 mA
14
13 500 mA
12
300 mA
11
10
0.1
VDD = 26 Vdc
f = 1990 MHz
1 10 100
Pout, OUTPUT POWER (WATTS)
www.DataSheet4U.com Figure 5. Power Gain versus
Output Power
1000
140
120
IDQ = 750 mA
f = 1990 MHz
100
Pin = 5 W
80
60 2 W
40
1W
20
0
12 14 16 18 20 22 24 26 28 30 32
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 6. Output Power versus Supply Voltage
120
Pin = 5 W
100
80
60 2 W
VDD = 26 Vdc
40 IDQ = 750 mA
1W
20
0
1.91 1.93 1.95 1.97 1.99 2.01
f, FREQUENCY (GHz)
Figure 7. Output Power versus Frequency
16
14
120 60
h
100 50
Pout
80 40
60 30
40 20
VDD = 26 Vdc
20 IDQ = 750 mA 10
f = 1990 MHz
00
01 2 3 4 56
Pin, INPUT POWER (WATTS)
Figure 8. Output Power and Efficiency
versus Input Power
0
Gps
-5
12 -10
IRL
10 -15
8
6
1.88 1.90
1.92 1.94 1.96 1.98
f, FREQUENCY (GHz)
-20
VDD = 26 Vdc
IDQ = 750 mA
-25
2.00 2.02 2.04
Figure 9. Wideband Gain and IRL
(at Small Signal)
MOTOROLA RF DEVICE DATA
MRF18090B MRF18090BS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MRF18090B.PDF ] | |
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