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PDF MRF5S9070NR1 Data sheet ( Hoja de datos )
| Número de pieza | MRF5S9070NR1 | |
| Descripción | SINGLE N-CDMA LATERAL N-CHANNEL BROADBAND RF POWER MOSFET | |
| Fabricantes | Freescale Semiconductor | |
| Logotipo |  |
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
this device make it ideal for large - signal, common - source amplifier applica-
tions in 26 volt base station equipment.
•
Typical Single - Carrier N
ITDrQaff=ic6C00odmeAs ,8PTohutro=u1g4h
-WCaDttMs AAvPge.,rfIoSrm- 9a5ncCeD@MA88(P0ilMotH, Sz,yVncD,DP=ag2i6ngV,olts,
13)
Power Gain — 17.8 dB
Drain Efficiency — 30%
ACPR @ 750 kHz Offset — - 47 dBc in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 70 Watts CW
Output Power
Features
www.Dat•aShCeheat4raUc.cteormized with Series Equivalent Large - Signal Impedance Parameters
• Integrated ESD Protection
• 200°C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Document Number: MRF5S9070NR1
Rev. 6, 5/2006
MRF5S9070NR1
880 MHz, 70 W, 26 V
SINGLE N - CDMA
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
CASE 1265 - 08, STYLE 1
TO - 270 - 2
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
VDSS
VGS
PD
Tstg
TJ
Symbol
- 0.5, + 68
- 0.5, + 15
219
1.25
- 65 to +150
200
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 70 W CW
Case Temperature 78°C, 14 W CW
RθJC
0.80
0.93
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
2 (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
1 260
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
Unit
°C/W
Unit
°C
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5S9070NR1
1
1 page  
C7 R1
VGG
B1 C8
R2
R3
C9
C11
C2
C1
C10
L1
C3
C4
C21
C19
B2
VDD
C20 R4
C22
C18
C6
L2
C12
C15
C5
C13 C14
C16
C17
MRF5S9070N
Rev 0
www.DataSheet4U.com
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF5S9070NR1 Test Circuit Component Layout
RF Device Data
Freescale Semiconductor
MRF5S9070NR1
5
5 Page 
NOTES
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RF Device Data
Freescale Semiconductor
MRF5S9070NR1
11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet MRF5S9070NR1.PDF ] | |
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