MRF9130LR3 Datasheet PDF - Motorola Semiconductors
| Part Number | MRF9130LR3 | |
| Description | 28 V LATERAL N-CHANNEL RF POWER MOSFETs | |
| Manufacturers | Motorola Semiconductors | |
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MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF9130L/D
The RF Sub - Micron MOSFET Line
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 921 to 960 MHz, the high gain and broadband performance
of these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
• Typical Performance for GSM Frequencies, 921 to 960 MHz, 28 Volts
Output Power @ P1dB — 135 Watts
Power Gain — 16.5 dB @ 130 Watts Output Power
Efficiency — 48% @ 130 Watts Output Power
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
www.Data• ShDeeest4igUn.ceodmfor Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 28 Vdc, All Frequency Band,
130 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF9130LR3
MRF9130LSR3
GSM/GSM EDGE
921 - 960 MHz, 130 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF9130LR3
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
CASE 465A - 06, STYLE 1
NI - 780S
MRF9130LSR3
Symbol
VDSS
VGS
PD
Tstg
TJ
Value
65
- 0.5, +15
298
1.7
- 65 to +200
200
Symbol
RθJC
Value
0.6
Class
1 (Minimum)
M2 (Minimum)
C7 (Minimum)
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
MMoOtorToOla,RInOc.L2A00R4 F DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF9130LR3 MRF9130LSR3
1
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www.DataSheet4U.com
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
18
17 Gps
16
Pout = 60 W
130 W
0
−5
−10
15
14
13
900
130 W
60 W
920 940
−15
IRL
VDD = 28 Vdc
IDQ = 1000 mA
−20
−25
960 980 1000
f, FREQUENCY (MHz)
Figure 3. Power Gain and Input Return Loss versus
Frequency
18 60
17.5
17 Gps
16.5
50
40
30
16 20
15.5 η
15
1
VDD = 28 Vdc
IDQ = 1000 mA
f = 940 MHz
10 100
10
0
1000
Pout, OUTPUT POWER (dBm)
Figure 4. Power Gain and Efficiency versus
Output Power
18
IDQ = 1200 mA
17 1000 mA
800 mA
16 600 mA
15
VDD = 28 Vdc
f = 940 MHz
14
1 10
100 1000
Pout, OUTPUT POWER (WATTS)
Figure 5. Power Gain versus Output Power
18
17
16
15 30 V
14
IDQ = 1000 mA
f = 940 MHz
13
1 10
VDD = 24 V
28 V
26 V
100
1000
Pout, OUTPUT POWER (WATTS)
Figure 6. Power Gain versus Output Power
18
TC = −20°C
17 25°C
50°C
85°C
16
15
VDD = 28 Vdc
IDQ = 1000 mA
f = 940 MHz
14
1 10
100 1000
Pout, OUTPUT POWER (WATTS)
Figure 7. Power Gain versus Output Power
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF9130LR3 MRF9130LSR3
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for MRF9130LR3 electronic component. |
| Information | Total 12 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ MRF9130LR3.PDF Datasheet ] | |
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| MRF9130LR3 | The function is 28 V LATERAL N-CHANNEL RF POWER MOSFETs. Motorola Semiconductors | |
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