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PDF H558 Data sheet ( Hoja de datos )
| Número de pieza | H558 | |
| Descripción | NPN SILICON TRANSISTOR | |
| Fabricantes | SHANTOU HUASHAN ELECTRONIC DEVICES | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de H558 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
H558
APPLICATIONS
SWITCHING AND AMPLIFIER
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
-55~150
Tj Junction Temperature
150
www.DataPSCheet4U.cComollector Dissipation
VCBO Collector-Base Voltage
500mW
- 30 V
VCEO Collector-Emitter Voltage
- 30 V
VEBO Emitter- Base Voltage
-5V
IC Collector Current
-1 00 m A
TO-92
1 Collector C
2 Base B
3 Emitter E
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage
IC=-100 A, IE=0
BVCEO Collector-Emitter Breakdown Voltage
IC=-10mA, IB=0
BVEBO Emitter-Base Breakdown Voltage
ICBO Collector Cut-off Current
IE=-100 A IC=0
VCB=-30V, IE=0
HFE DC Current Gain
VCE=-5V, IC=-2mA
VCE(sat1) Collector- Emitter Saturation Voltage
IC=-10mA, IB=-0.5mA
VCE(sat2)
IC=-100mA, IB=-5mA
VBE(sat1) Base-Emitter Saturation Voltage
IC=-10mA, IB=-0.5mA
VBE(sat2)
IC=-100mA, IB=-5mA
VBE(ON1) Base-Emitter On Voltage
VCE=-5V, IC=-2mA
VBE(ON2)
fT Current Gain-Bandwidth Product
VCE=-5V, IC=-10mA
VCE=- 5V, IC=- 10mA, f=1MHz
Cob Output Capacitance
VCB=-10V, IE=0 f=1MHz
hFE Classification
A
110 220
B
200 450
C
420 800
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet H558.PDF ] | |
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