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PDF H5551 Data sheet ( Hoja de datos )
| Número de pieza | H5551 | |
| Descripción | NPN SILICON TRANSISTOR | |
| Fabricantes | SHANTOU HUASHAN ELECTRONIC DEVICES | |
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Hay una vista previa y un enlace de descarga de H5551 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
H5551
AMPLIFIER TRANSISTOR
Collector-Emitter Voltage:Vceo=160V.
CollectorDissipation:Pc(max)=625mW
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
Tj Junction Temperature
www.DataSheet4U.com
PC Collector Dissipation
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC Collector Current
-55~150
150
625mW
180V
160V
6V
600mA
TO-92
1 Emitter E
2 Base B
3 Collector C
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
HFE 1
HFE 2
HFE 3
VCE(sat1)
VCE(sat2)
VBE(sat1)
VBE(sat2)
fT
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter-Base Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Min
180
160
6
80
80
30
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product 100
Typ Max Unit
Test Conditions
V
V
V
50 nA
50 nA
IC=100 A, IE=0
IC=1mA, IB=0
IE=10 A IC=0
VCB=120V, IE=0
VEB=4V, IC=0
VCE=5V, IC=1mA
280 VCE=5V, IC=10mA
VCE=5V, IC=50mA
0.15 V
IC=10mA, IB=-1mA
0.2 V
IC=50mA, IB=5mA
1V
IC=10mA, IB=1mA
1 V IC=50mA, IB=5mA,
300 MHz VCE=10V, IC=10mA
F=100MHz
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| PDF Descargar | [ Datasheet H5551.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
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