7D0N65F1 Datasheet PDF - KEC
| Part Number | 7D0N65F1 | |
| Description | KHB7D0N65F1 | |
| Manufacturers | KEC | |
| Logo |  |
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SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction and switching mode power supplies.
FEATURES
VDSS=650V, ID=7A
Drain-Source ON Resistance :
RDS(ON)=1.4 @VGS=10V
Qg(typ.)= 32nC
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MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KHB7D0N65P1 KHB7D0N65F1
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
650 V
30 V
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
ID
IDP
EAS
EAR
dv/dt
PD
7 7*
4.2 4.2*
28 28*
212
1.6
4.5
160 52
1.28 0.42
A
mJ
mJ
V/ns
W
W/
Maximum Junction Temperature
Storage Temperature Range
Tj
Tstg
150
-55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
0.78
Thermal Resistance, Case-to-Sink
RthCS
0.5
Thermal Resistance,
Junction-to-Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
2.4 /W
- /W
62.5 /W
KHB7D0N65P1/F1
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
KHB7D0N65P1
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8+_ 0.1
3.6 +_ 0.2
2.8+_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08+_ 0.3
1.46
1.4 +_ 0.1
1.27+_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
TO-220AB
A
E
P
K
L
D
MM
N 123
KHB7D0N65F1
C
F
B
G
O
JQ
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_0.1
E 3.18 +_ 0.1
F 3.3 +_0.1
G 12.57 +_ 0.2
H 0.5 +_0.1
J 13.0 MAX
K 3.23 +_ 0.1
L 1.47 MAX
M 2.54 +_ 0.2
N 4.7 +_ 0.2
O 6.68 +_ 0.2
P 6.5
Q 2.76 +_ 0.2
TO-220IS
D
2006. 2. 20
Revision No : 1
G
S
1/7
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KHB7D0N65P1/F1
100
www.DataSheet4U.com
Duty=0.5
10-1
0.2
0.1
0.05
10-2
0.02
0.01
Single Pulse
10-5 10-4
Rth
{KHB7D0N65P1}
10-3 10-2
PDM
t1
t2
- Duty Factor, D= t1/t2
- RthJC =
Tj(max) - Tc
PD
10-1 100
101
Square Wave Pulse Duration (sec)
Rth
{KHB7D0N65F1}
100 Duty=0.5
0.2
0.1
10-1 0.05
10-2
0.02
0.01
Single Pulse
10-5 10-4
10-3 10-2
PDM
t1
t2
- Duty Factor, D= t1/t2
- RthJC =
Tj(max) - Tc
PD
10-1 100
101
Square Wave Pulse Duration (sec)
2006. 2. 20
Revision No : 1
5/7
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 7D0N65F1 electronic component. |
| Information | Total 7 Pages | |
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| Product Image and Detail view |  1. - KHB7D0N65F1 - 650V, MOSFET [ Learn More ] | |
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