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IRGB5B120KDPBF の電気的特性と機能

IRGB5B120KDPBFのメーカーはInternational Rectifierです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRGB5B120KDPBF
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRGB5B120KDPBF Datasheet, IRGB5B120KDPBF PDF,ピン配置, 機能
PD - 95617
IRGB5B120KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
www.DataSheet4UU.lctraosmoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• TO-220 Package.
• Lead-Free
C
G
E
n-channel
VCES = 1200V
IC = 6.0A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 2.75V
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current 
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
TO-220AB
Max.
1200
12
6.0
24
24
12
6.0
24
± 20
89
36
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2 (0.07)
Max.
1.4
2.8
–––
62
–––
Units
°C/W
g (oz)
1
8/2/04

1 Page





IRGB5B120KDPBF pdf, ピン配列
IRGB5B120KDPbF
14
12
10
8
www.DataSheet4U.com6
4
2
0
0 20 40 60 80 100 120 140 160
TC (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
100
80
60
40
20
0
0 50 100 150 200
TC (°C)
Fig. 2 - Power Dissipation vs. Case
Temperature
100
10
1
0.1
0.01
1
10 µs
100 µs
DC
1ms
10ms
10
100
1000
10000
VCE (V)
Fig. 3 - Forward SOA
TC = 25°C; TJ 150°C
www.irf.com
100
10
1
0
10
100 1000
VCE (V)
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE =15V
10000
3


3Pages


IRGB5B120KDPBF 電子部品, 半導体
IRGB5B120KDPbF
1200
1000
EON
800
600
www.DataSheet4U.co4m00
EOFF
200
0
0 4 8 12 16 20
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 125°C; L=3.7mH; VCE= 600V
RG= 50; VGE= 15V
1000
tdOFF
100
tR
10
4
tF
6
8 10
IC (A)
tdON
12 14
Fig. 14 - Typ. Switching Time vs. IC
TJ = 125°C; L=3.7mH; VCE= 600V
RG= 50; VGE= 15V
1400
1200
1000
800
600
400
200
0
0
EON
EOFF
100 200 300
RG ()
400
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 125°C; L=3.7mH; VCE= 600V
ICE= 6.0A; VGE= 15V
6
1000
tdOFF
100 tR
tdON
10
0
tF
100 200 300
RG ()
400
Fig. 16 - Typ. Switching Time vs. RG
TJ = 125°C; L=3.7mH; VCE= 600V
ICE= 6.0A; VGE= 15V
www.irf.com

6 Page



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共有リンク

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部品番号部品説明メーカ
IRGB5B120KDPBF

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier
International Rectifier


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