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IRFB41N15DPBF の電気的特性と機能

IRFB41N15DPBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFB41N15DPBF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFB41N15DPBF Datasheet, IRFB41N15DPBF PDF,ピン配置, 機能
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Applications
l High frequency DC-DC converters
l Lead-Free
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
VDSS
150V
PD - 94927A
IRFB41N15DPbF
IRFIB41N15DPbF
IRFS41N15DPbF
IRFSL41N15DPbF
HEXFET® Power MOSFET
RDS(on) max
0.045:
ID
41A
TO-220AB TO-220 FullPak D2Pak
TO-262
IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
cIDM Pulsed Drain Current
PD @TA = 25°C Power Dissipation, D2Pak
PD @TC = 25°C Power Dissipation, TO-220
PD @TC = 25°C Power Dissipation, Fullpak
Linear Derating Factor, TO-220
Linear Derating Factor, Fullpak
VGS
dv/dt
TJ
TSTG
Gate-to-Source Voltage
ePeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
Junction-to-Case
RθJC Junction-to-Case, Fullpak
hRθcs Case-to-Sink, Flat, Greased Surface
hRθJA Junction-to-Ambient, TO-220
iRθJA Junction-to-Ambient, D2Pak
RθJA Junction-to-Ambient, Fullpak
Notes  through ‡ are on page 12
www.irf.com
Max.
41
29
164
3.1
200
48
1.3
0.32
± 30
2.7
-55 to + 175
300 (1.6mm from case )
1.1(10)
Typ.
–––
–––
0.50
–––
–––
–––
Max.
0.75
3.14
–––
62
40
65
Units
A
W
W/°C
V
V/ns
°C
N•m (lbf•in)
Units
°C/W
1
08/10/06

1 Page





IRFB41N15DPBF pdf, ピン配列
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1000
100
VGS
TOP 15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
IRFB/IRFIB/IRFS/IRFSL41N15DPbF
1000
100
VGS
TOP 15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
10
6.0V
20µs PULSE WIDTH
TJ= 25 °C
1
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10 6.0V
20µs PULSE WIDTH
TJ= 175 °C
1
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
TJ = 175° C
TJ = 25° C
10
V DS= 25V
20µs PULSE WIDTH
1
6 7 8 9 10 11
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
3.0 ID = 41A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
vs. Temperature
3


3Pages


IRFB41N15DPBF 電子部品, 半導体
www.DataSheet4U.com
IRFB/IRFIB/IRFS/IRFSL41N15DPbF
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
VGS
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
1200
1000
800
TOPTOP
BOTTOM
BOTTOM
IDD
173.13AA0A
182A1A
25A
600
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6 www.irf.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IRFB41N15DPBF

HEXFET Power MOSFET

International Rectifier
International Rectifier


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