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IRFB4110QPBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。 |
部品番号 | IRFB4110QPBF |
| |
部品説明 | HEXFET Power MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFB4110QPBFダウンロード(pdfファイル)リンクがあります。 Total 8 pages
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
l Lead-Free
Benefits
l Improved Gate, Avalanche and Dynamic dv/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l 175°C Operating Temperature
l Automotive [Q101] Qualified
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
dPulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
eSingle Pulse Avalanche Energy
ÃAvalanche Current
gRepetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
Parameter
kJunction-to-Case
RθCS
RθJA
Case-to-Sink, Flat Greased Surface
jJunction-to-Ambient
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PD - 96138
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IRFB4110QPbF
VDSS
RDS(on)
ID
HEXFET® Power MOSFET
typ.
max
100V
3.7m:
4.5m:
180A
D
D
G
G
Gate
S
GD
S TO-220AB
D
Drain
S
Source
Max.
180
130
670
370
2.5
± 20
5.3
-55 to + 175
300
x x10lb in (1.1N m)
210
75
37
Typ.
–––
0.50
–––
Max.
0.402
–––
62
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
02/11/08
1 Page 1000
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
100
4.5V
1000
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
100
IRFB4110QPbF
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4.5V
10
0.1
≤60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
10 TJ = 25°C
TJ = 175°C
1
VDS = 25V
≤60µs PULSE WIDTH
0.1
1234567
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
100
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
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10
0.1
≤60µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
3.0
ID = 75A
VGS = 10V
2.5
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
12.0
ID= 75A
10.0
VDS= 80V
8.0 VDS= 50V
6.0
4.0
2.0
0.0
0
50 100 150 200
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3
3Pages IRFB4110QPbF
4.0
3.5
3.0
2.5
2.0
ID = 250µA
ID = 1.0mA
1.5 ID = 1.0A
1.0
0.5
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 16. Threshold Voltage vs. Temperature
25
IF = 45A
20
VR = 85V
TJ = 25°C
TJ = 125°C
15
10
5
25
IF = 30A
20
VR = 85V
TJ = 25°C
TJ = 125°C
15
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10
5
0
0 200 400 600 800 1000
diF /dt (A/µs)
Fig. 17 - Typical Recovery Current vs. dif/dt
560
IF = 30A
480 VR = 85V
TJ = 25°C
400 TJ = 125°C
320
240
160
0
0 200 400 600 800 1000
diF /dt (A/µs)
Fig. 18 - Typical Recovery Current vs. dif/dt
560
IF = 45A
480 VR = 85V
TJ = 25°C
400 TJ = 125°C
80
0
200 400 600 800 1000
diF /dt (A/µs)
Fig. 19 - Typical Stored Charge vs. dif/dt
320
240
160
80
0
200 400 600 800 1000
diF /dt (A/µs)
Fig. 20 - Typical Stored Charge vs. dif/dt
6 www.irf.com
6 Page | |||
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部品番号 | 部品説明 | メーカ |
IRFB4110QPBF | HEXFET Power MOSFET | International Rectifier |