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IRFB4110PBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。 |
部品番号 | IRFB4110PBF |
| |
部品説明 | HEXFET Power MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFB4110PBFダウンロード(pdfファイル)リンクがあります。 Total 9 pages
IRFB4110PbF
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dv/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead Free
l RoHS Compliant, Halogen-Free
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
100V
3.7mΩ
c4.5mΩ
180A
S ID (Package Limited)
120A
D
G
Gate
S
D
G
TO-220AB
D
Drain
S
Source
Base Part Number
IRFB4110PbF
Package Type
TO-220
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRFB4110PbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
dPulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
eSingle Pulse Avalanche Energy
ÃdAvalanche Current
gRepetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
kRθJC
Junction-to-Case
RθCS
RθJA
Case-to-Sink, Flat Greased Surface
jJunction-to-Ambient
Max.
180
130
120
670
370
2.5
± 20
5.3
-55 to + 175
300
x x10lb in (1.1N m)
190
See Fig. 14, 15, 22a, 22b
Typ.
–––
0.50
–––
Max.
0.402
–––
62
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
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1 Page 1000
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
100
4.5V
IRFB4110PbF
1000
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
100
4.5V
10
0.1
≤60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
10
0.1
≤60µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
3.0
ID = 75A
VGS = 10V
2.5
10 TJ = 25°C
TJ = 175°C
1
VDS = 25V
≤60µs PULSE WIDTH
0.1
1234567
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
12.0
ID= 75A
10.0
VDS= 80V
8.0 VDS= 50V
6.0
4.0
2.0
100
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
0.0
0
50 100 150 200
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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3Pages IRFB4110PbF
4.0
3.5
3.0
2.5
2.0
ID = 250µA
ID = 1.0mA
1.5 ID = 1.0A
1.0
0.5
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 16. Threshold Voltage vs. Temperature
25
IF = 45A
20
VR = 85V
TJ = 25°C
TJ = 125°C
15
10
5
25
IF = 30A
20
VR = 85V
TJ = 25°C
TJ = 125°C
15
10
5
0
0 200 400 600 800 1000
diF /dt (A/µs)
Fig. 17 - Typical Recovery Current vs. dif/dt
560
IF = 30A
480 VR = 85V
TJ = 25°C
400 TJ = 125°C
320
240
160
0
0 200 400 600 800 1000
diF /dt (A/µs)
Fig. 18 - Typical Recovery Current vs. dif/dt
560
IF = 45A
480 VR = 85V
TJ = 25°C
400 TJ = 125°C
80
0
200 400 600 800 1000
diF /dt (A/µs)
Fig. 19 - Typical Stored Charge vs. dif/dt
320
240
160
80
0
200 400 600 800 1000
diF /dt (A/µs)
Fig. 20 - Typical Stored Charge vs. dif/dt
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6 Page | |||
ページ | 合計 : 9 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRFB4110PBF | HEXFET Power MOSFET | International Rectifier |