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PDF IRFB4110PBF Data sheet ( Hoja de datos )
| Número de pieza | IRFB4110PBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
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IRFB4110PbF
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dv/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead Free
l RoHS Compliant, Halogen-Free
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
100V
3.7mΩ
c4.5mΩ
180A
S ID (Package Limited)
120A
D
G
Gate
S
D
G
TO-220AB
D
Drain
S
Source
Base Part Number
IRFB4110PbF
Package Type
TO-220
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRFB4110PbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
dPulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
eSingle Pulse Avalanche Energy
ÃdAvalanche Current
gRepetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
kRθJC
Junction-to-Case
RθCS
RθJA
Case-to-Sink, Flat Greased Surface
jJunction-to-Ambient
Max.
180
130
120
670
370
2.5
± 20
5.3
-55 to + 175
300
x x10lb in (1.1N m)
190
See Fig. 14, 15, 22a, 22b
Typ.
–––
0.50
–––
Max.
0.402
–––
62
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
April 28, 2014
1 page  
IRFB4110PbF
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
τJ τJ
τ1 τ1
R 1R 1
CiC= iτ=i/τRi/iRi
R 2R 2
τ2 τ2
R3R3 Ri (°C/W)
τCτC 0.09876251
τ3τ3 0.2066697
0.09510464
τi (sec)
0.000111
0.001743
0.012269
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
100
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
0.05
10 0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14. Typical Avalanche Current vs.Pulsewidth
250
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
200 ID = 108A
150
100
50
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
0
25
50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
5 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
April 28, 2014
5 Page | ||
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| PDF Descargar | [ Datasheet IRFB4110PBF.PDF ] | |
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