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PDF IRFB4103PBF Data sheet ( Hoja de datos )
| Número de pieza | IRFB4103PBF | |
| Descripción | DIGITAL AUDIO MOSFET | |
| Fabricantes | International Rectifier | |
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DIGITAL AUDIO MOSFET
PD - 96909
IRFB4103PbFwww.DataSheet4U.com
Features
• Key parameters optimized for Class-D audio
amplifier applications
• Low RDSON for improved efficiency
• Low QG and QSW for better THD and improved
efficiency
• Low QRR for better THD and lower EMI
• 175°C operating junction temperature for
ruggedness
• Can deliver up to 300W per channel into 8Ω load in
half-bridge topology
Key Parameters
VDS
RDS(ON) typ. @ 10V
Qg typ.
Qsw typ.
RG(int) typ.
TJ max
200
139
25
15
1.0
175
D
G
V
m:
nC
nC
Ω
°C
S TO-220AB
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes
the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,
robust and reliable device for ClassD audio amplifier applications.
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
Power Dissipation f
Power Dissipation f
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
200
±30
17
12
68
140
71
0.95
-55 to + 175
300
10lbxin (1.1Nxm)
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case f
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient f
Notes through
are on page 2
www.irf.com
Typ.
–––
0.50
–––
Max.
1.05
–––
62
Units
°C/W
1
1/5/05
1 page  
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
6.0
ID = 12A
TJ = 125°C
TJ = 25°C
8.0 10.0 12.0 14.0 16.0
VGS, Gate-to-Source Voltage (V)
18.0
Fig 12. On-Resistance Vs. Gate Voltage
100
Duty Cycle = Single Pulse
10 0.01
0.05
0.10
1
IRFB4103PbF
www.DataSheet4U.com
600
ID
500
TOP 3.7A
6.2A
BOTTOM 12A
400
300
200
100
0
25
50 75 100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy Vs. Drain Current
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
tav (sec)
Fig 14. Typical Avalanche Current Vs.Pulsewidth
1.0E-02
1.0E-01
140
TOP
Single Pulse
120
BOTTOM 1% Duty Cycle
ID = 12A
100
80
60
40
20
0
25
50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 15. Maximum Avalanche Energy Vs. Temperature
www.irf.com
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 17a, 17b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
5
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| PDF Descargar | [ Datasheet IRFB4103PBF.PDF ] | |
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