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IRFB4103PBF の電気的特性と機能

IRFB4103PBFのメーカーはInternational Rectifierです、この部品の機能は「DIGITAL AUDIO MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFB4103PBF
部品説明 DIGITAL AUDIO MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFB4103PBF Datasheet, IRFB4103PBF PDF,ピン配置, 機能
DIGITAL AUDIO MOSFET
PD - 96909
IRFB4103PbFwww.DataSheet4U.com
Features
Key parameters optimized for Class-D audio
amplifier applications
Low RDSON for improved efficiency
Low QG and QSW for better THD and improved
efficiency
Low QRR for better THD and lower EMI
175°C operating junction temperature for
ruggedness
Can deliver up to 300W per channel into 8load in
half-bridge topology
Key Parameters
VDS
RDS(ON) typ. @ 10V
Qg typ.
Qsw typ.
RG(int) typ.
TJ max
200
139
25
15
1.0
175
D
G
V
m:
nC
nC
°C
S TO-220AB
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes
the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,
robust and reliable device for ClassD audio amplifier applications.
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
Power Dissipation f
Power Dissipation f
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
200
±30
17
12
68
140
71
0.95
-55 to + 175
300
10lbxin (1.1Nxm)
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case f
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient f
Notes  through … are on page 2
www.irf.com
Typ.
–––
0.50
–––
Max.
1.05
–––
62
Units
°C/W
1
1/5/05

1 Page





IRFB4103PBF pdf, ピン配列
100
VGS
TOP
15V
12V
10V
9.0V
8.0V
10
7.0V
BOTTOM 6.0V
1
6.0V
0.1
0.1
60µs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100.0
10.0 TJ = 175°C
1.0 TJ = 25°C
0.1
2.0
VDS = 50V
60µs PULSE WIDTH
4.0 6.0 8.0 10.0
VGS, Gate-to-Source Voltage (V)
12.0
Fig 3. Typical Transfer Characteristics
IRFB4103PbF
www.DataSheet4U.com
100
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
10
6.0V
1
0.1
60µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
3.5
ID = 17A
3.0 VGS = 10V
2.5
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
20
ID= 12A
16
12
VDS= 160V
VDS= 100V
VDS= 40V
Coss
100
Crss
8
4
10
1
10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
www.irf.com
0
0 10 20 30 40
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3


3Pages


IRFB4103PBF 電子部品, 半導体
IRFB4103PbF
D.U.T +
Driver Gate Drive
P.W.
Period
www.DataSheet4U.com
D=
P.W.
Period
+
‚
-

RG
ƒ Circuit Layout Considerations
Low Stray Inductance
-
Ground Plane
Low Leakage Inductance
Current Transformer
-„ +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
dv/dt controlled by RG
Driver same type as D.U.T.
VDD
+
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
-
Re-Applied
Voltage
Body Diode
IInndduuccttoor Currerennt t
Forward Drop
Ripple 5%
*VGS=10V
VDD
ISD
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
15V tp
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 17a. Unclamped Inductive Test Circuit
IAS
Fig 17b. Unclamped Inductive Waveforms
VDS
LD
+
VDD -
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
D.U.T
Fig 18a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 18b. Switching Time Waveforms
Id
Vds
Vgs
L
VCC
DUT
0
1K
Vgs(th)
Fig 19a. Gate Charge Test Circuit
6
Qgs1 Qgs2 Qgd
Qgodr
Fig 19b Gate Charge Waveform
www.irf.com

6 Page



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部品番号部品説明メーカ
IRFB4103PBF

DIGITAL AUDIO MOSFET

International Rectifier
International Rectifier


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