|
|
STE26NA90のメーカーはSTMicroelectronicsです、この部品の機能は「ISOTOP FAST POWER MOSFET」です。 |
部品番号 | STE26NA90 |
| |
部品説明 | ISOTOP FAST POWER MOSFET | ||
メーカ | STMicroelectronics | ||
ロゴ | |||
このページの下部にプレビューとSTE26NA90ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
www.DataSheet4U.com
® STE26NA90
N - CHANNEL 900V - 0.25Ω - 26A - ISOTOP
FAST POWER MOSFET
TYPE
V DSS
RDS(on)
ID
STE26NA90
900 V
< 0.3 Ω
26 A
s TYPICAL RDS(on) = 0.25 Ω
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s LOW INTRINSIC CAPACITANCE
s GATE CHARGE MINIMIZED
s REDUCED VOLTAGE SPREAD
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLY (SMPS)
s DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY AND MOTOR DRIVE
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
VDS
V DGR
VGS
ID
ID
Drain-source Volt age (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM(•)
Ptot
Drain Current (pulsed)
T otal Dissipation at Tc = 25 oC
Derating Factor
Ts tg Storage T emperature
Tj Max. Operating Junction Temperature
VISO I nsulation Withstand Voltage (AC-RMS)
(•) Pulse width limited by safe operating area
October 1998
Value
900
900
± 30
26
16 .2
104
450
3 .6
-55 to 150
150
2500
Un it
V
V
V
A
A
A
W
W /o C
oC
oC
V
1/8
1 Page www.DataSheet4U.com
STE26NA90
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
P ar am et e r
Turn-on Time
Rise Time
Qg Total Gate Charge
Q gs Gat e-Source Charge
Qgd Gat e-Drain Charge
Test Conditions
VDD = 450 V
ID = 12 A
RG = 4.7 Ω
VGS = 10 V
(see test circuit, figure 3)
VDD = 720 V ID = 26 A VGS = 10 V
Min.
Typ.
40
52
470
43
226
Max.
56
73
660
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
P ar am et e r
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
VDD = 720 V
ID = 26 A
RG = 4.7 Ω
VGS = 10 V
(see test circuit, figure 5)
Min.
Typ.
108
25
145
Max.
152
35
203
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
ISD
ISDM (•)
VSD (∗)
trr
Qrr
I R RM
P ar am et e r
Source-drain Current
Source-drain Current
( pu ls ed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Test Conditions
ISD = 26 A VGS = 0
ISD = 26 A
VDD = 100 V
di/dt = 100 A/µs
Tj = 150 oC
(see test circuit, figure 5)
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
Max.
26
104
Unit
A
A
1.6 V
1.3 µs
38 µC
58 A
Safe Operating Area
Thermal Impedance
3/8
3Pages STE26NA90
Fig. 1: Unclamped Inductive Load Test Circuit
www.DataSheet4U.com
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
6 Page | |||
ページ | 合計 : 8 ページ | ||
|
PDF ダウンロード | [ STE26NA90 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
STE26NA90 | ISOTOP FAST POWER MOSFET | STMicroelectronics |