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STE26NA90 の電気的特性と機能

STE26NA90のメーカーはSTMicroelectronicsです、この部品の機能は「ISOTOP FAST POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 STE26NA90
部品説明 ISOTOP FAST POWER MOSFET
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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STE26NA90 Datasheet, STE26NA90 PDF,ピン配置, 機能
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® STE26NA90
N - CHANNEL 900V - 0.25- 26A - ISOTOP
FAST POWER MOSFET
TYPE
V DSS
RDS(on)
ID
STE26NA90
900 V
< 0.3
26 A
s TYPICAL RDS(on) = 0.25
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s LOW INTRINSIC CAPACITANCE
s GATE CHARGE MINIMIZED
s REDUCED VOLTAGE SPREAD
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLY (SMPS)
s DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY AND MOTOR DRIVE
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
VDS
V DGR
VGS
ID
ID
Drain-source Volt age (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM()
Ptot
Drain Current (pulsed)
T otal Dissipation at Tc = 25 oC
Derating Factor
Ts tg Storage T emperature
Tj Max. Operating Junction Temperature
VISO I nsulation Withstand Voltage (AC-RMS)
() Pulse width limited by safe operating area
October 1998
Value
900
900
± 30
26
16 .2
104
450
3 .6
-55 to 150
150
2500
Un it
V
V
V
A
A
A
W
W /o C
oC
oC
V
1/8

1 Page





STE26NA90 pdf, ピン配列
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STE26NA90
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
P ar am et e r
Turn-on Time
Rise Time
Qg Total Gate Charge
Q gs Gat e-Source Charge
Qgd Gat e-Drain Charge
Test Conditions
VDD = 450 V
ID = 12 A
RG = 4.7
VGS = 10 V
(see test circuit, figure 3)
VDD = 720 V ID = 26 A VGS = 10 V
Min.
Typ.
40
52
470
43
226
Max.
56
73
660
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
P ar am et e r
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
VDD = 720 V
ID = 26 A
RG = 4.7
VGS = 10 V
(see test circuit, figure 5)
Min.
Typ.
108
25
145
Max.
152
35
203
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
ISD
ISDM ()
VSD ()
trr
Qrr
I R RM
P ar am et e r
Source-drain Current
Source-drain Current
( pu ls ed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Test Conditions
ISD = 26 A VGS = 0
ISD = 26 A
VDD = 100 V
di/dt = 100 A/µs
Tj = 150 oC
(see test circuit, figure 5)
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
Typ.
Max.
26
104
Unit
A
A
1.6 V
1.3 µs
38 µC
58 A
Safe Operating Area
Thermal Impedance
3/8


3Pages


STE26NA90 電子部品, 半導体
STE26NA90
Fig. 1: Unclamped Inductive Load Test Circuit
www.DataSheet4U.com
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8

6 Page



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共有リンク

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部品番号部品説明メーカ
STE26NA90

ISOTOP FAST POWER MOSFET

STMicroelectronics
STMicroelectronics


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