PDF IS42S16100E Data sheet ( Hoja de datos )

Número de pieza	IS42S16100E
Descripción	512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
Fabricantes	Integrated Silicon Solution
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No Preview Available ! IS42S16100E IS45S16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM JUNE 2010 FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently • Dual internal bank controlled by A11 (bank select) • Single 3.3V power supply • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst sequence: Sequential/Interleave • 2048 refresh cycles every 32ms (Com, Ind, A1 grade) or 16ms (A2 grade) • Random column address every clock cycle • Programmable CAS latency (2, 3 clocks) • Burst read/write and burst read/single write operations capability • Burst termination by burst stop and precharge command • Byte controlled by LDQM and UDQM • Packages: 400-mil 50-pin TSOP-II and 60-ball TF-BGA • Temperature Grades: Commercial (0oC to +70oC) Industrial (-40oC to +85oC) Automotive A1 (-40oC to +85oC) Automotive A2 (-40oC to +105oC) DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42/4516100E is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. Copyright © 2010 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can rea- sonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applica- tions unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized; b.) the user assume all such risks; and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc. — www.issi.com Rev. E 05/18/2010 1 1 page IS42S16100E, IS45S16100E FUNCTIONAL BLOCK DIAGRAM CLK CKE CS COMMAND RAS DECODER CAS & WE CLOCK A11 GENERATOR MODE REGISTER 11 A10 A9 REFRESH SELF A8 CONTROLLER REFRESH A7 CONTROLLER A6 A5 A4 REFRESH COUNTER A3 A2 A1 A0 ROW ADDRESS 11 LATCH ROW ADDRESS BUFFER 11 11 MEMORY CELL ARRAY 2048 BANK 0 SENSE AMP I/O GATE 256 8 COLUMN DECODER 8 256 SENSE AMP I/O GATE ROW ADDRESS 11 BUFFER 11 MEMORY CELL 2048 ARRAY BANK 1 DATA IN BUFFER 16 16 DQM DQ 0-15 DATA OUT BUFFER 16 16 VDD/VDDQ GND/GNDQ Integrated Silicon Solution, Inc. — www.issi.com Rev. E 05/18/2010 5 5 Page IS42S16100E, IS45S16100E COMMANDS Active Command CLK CKE HIGH CS RAS CAS WE A0-A9 ROW A10 A11 ROW BANK 1 BANK 0 Write Command CLK CKE HIGH CS RAS CAS WE A0-A9 A10 A11 COLUMN(1) AUTO PRECHARGE NO PRECHARGE BANK 1 BANK 0 Notes: 1. A8-A9 = Don’t Care. Integrated Silicon Solution, Inc. — www.issi.com Rev. E 05/18/2010 Read Command CLK CKE HIGH CS RAS CAS WE A0-A9 A10 A11 COLUMN (1) AUTO PRECHARGE NO PRECHARGE BANK 1 BANK 0 Precharge Command CLK CKE HIGH CS RAS CAS WE A0-A9 A10 A11 BANK 0 AND BANK 1 BANK 0 OR BANK 1 BANK 1 BANK 0 Don't Care 11 11 Page

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Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
IS42S16100	512K Words x 16Bits x 2 Banks Synchronous Dynamic RAM	Integrated Silicon Solution
IS42S16100A1	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM	ISSI
IS42S16100C1	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM	ISSI
IS42S16100E	512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM	Integrated Silicon Solution

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