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IS45S16100E の電気的特性と機能

IS45S16100EのメーカーはIntegrated Silicon Solutionです、この部品の機能は「512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM」です。


製品の詳細 ( Datasheet PDF )

部品番号 IS45S16100E
部品説明 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
メーカ Integrated Silicon Solution
ロゴ Integrated Silicon Solution ロゴ 




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IS45S16100E Datasheet, IS45S16100E PDF,ピン配置, 機能
IS42S16100E
IS45S16100E
512K Words x 16 Bits x 2 Banks
16Mb SYNCHRONOUS DYNAMIC RAM
JUNE 2010
FEATURES
• Clock frequency: 200, 166, 143 MHz
• Fully synchronous; all signals referenced to a
positive clock edge
• Two banks can be operated simultaneously and
independently
• Dual internal bank controlled by A11 (bank select)
• Single 3.3V power supply
• LVTTL interface
• Programmable burst length
– (1, 2, 4, 8, full page)
• Programmable burst sequence:
Sequential/Interleave
• 2048 refresh cycles every 32ms (Com, Ind, A1
grade) or 16ms (A2 grade)
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write
operations capability
• Burst termination by burst stop and
precharge command
• Byte controlled by LDQM and UDQM
• Packages: 400-mil 50-pin TSOP-II and 60-ball
TF-BGA
• Temperature Grades:
Commercial (0oC to +70oC)
Industrial (-40oC to +85oC)
Automotive A1 (-40oC to +85oC)
Automotive A2 (-40oC to +105oC)
DESCRIPTION
ISSI’s 16Mb Synchronous DRAM IS42/4516100E is
organized as a 524,288-word x 16-bit x 2-bank for
improved performance. The synchronous DRAMs
achieve high-speed data transfer using pipeline
architecture. All inputs and outputs signals refer to the
rising edge of the clock input.
Copyright © 2010 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the
latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can rea-
sonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applica-
tions unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com
Rev. E
05/18/2010
1

1 Page





IS45S16100E pdf, ピン配列
IS42S16100E, IS45S16100E
PIN CONFIGURATION
package code: B 60 bALL Tf-bga (Top View) (10.1 mm x 6.4 mm Body, 0.65 mm Ball Pitch)
1234567
A
GND DQ15
B
DQ14 GND
C
DQ13 VDDQ
D
DQ12 DQ11
E
DQ10 GNDQ
F
DQ9 VDDQ
G
DQ8 NC
H
NC NC
J
NC UDQM
K
NC CLK
L
CKE NC
M
A11 A9
N
A8 A7
P
A6 A5
R
GND A4
DQ0 VDD
VDDQ DQ1
GNDQ DQ2
DQ4 DQ3
VDDQ DQ5
GNDQ DQ6
NC DQ7
VDD NC
LDQM WE
RAS CAS
NC CS
NC NC
A0 A10
A2 A1
A3 VDD
PIN DESCRIPTIONS
A0-A10
Row Address Input
A0-A7 Column Address Input
A11
Bank Select Address
DQ0 to DQ15 Data I/O
CLK
System Clock Input
CKE Clock Enable
CS Chip Select
RAS
Row Address Strobe Command
CAS
Column Address Strobe Command
WE
Write Enable
LDQM, UDQM x16 Input/Output Mask
Vdd Power
GND Ground
Vddq Power Supply for I/O Pin
GNDq Ground for I/O Pin
NC
No Connection
Integrated Silicon Solution, Inc. — www.issi.com
Rev.  E
05/18/2010
3


3Pages


IS45S16100E 電子部品, 半導体
IS42S16100E, IS45S16100E
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameters
Rating Unit
Vdd max
Maximum Supply Voltage
–1.0 to +4.6 V
Vddq max
Maximum Supply Voltage for Output Buffer
–1.0 to +4.6 V
Vin
Input Voltage
–1.0 to +4.6 V
Vout
Output Voltage
–1.0 to +4.6 V
Pd max
Allowable Power Dissipation
1 W
Ics Output Shorted Current
50 mA
Topr
Operating Temperature
Commerical 0 to +70 °C
Industrial -40 to +85 °C
A1 -40 to +85 °C
A2 -40 to +105 °C
Tstg
Storage Temperature
–55 to +150 °C
DC RECOMMENDED OPERATING CONDITION(2)
(At Ta = 0oC to +70oC for Commercial temperature, Ta = -40oC to +85oC for Industrial and A1 temperature, Ta = -40oC to
+105oC for A2 temperature)
Symbol
Vdd, Vddq
Vih
Vil
Parameter
Supply Voltage
Input High Voltage(3)
Input Low Voltage(4)
Min.
3.0
2.0
-0.3
Typ.
3.3
Max.
3.6
Vdd + 0.3
+0.8
Unit
V
V
V
CAPACITANCE CHARACTERISTICS(1,2) (At Ta = 0 to +25°C, VDD = VDDQ = 3.3 ± 0.3V, f = 1 MHz)
Symbol Parameter
Typ. Max. Unit
Cin1
Input Capacitance: A0-A11
— 4 pF
Cin2
Input Capacitance: (CLK, CKE, CS, RAS, CAS, WE, LDQM, UDQM) —
4 pF
CI/O
Data Input/Output Capacitance: DQ0-DQ15
— 5 pF
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
2. All voltages are referenced to GND.
3. Vih (max) = Vddq + 1.2V with a pulse width 3 ns.
4. Vil (min) = Vddq - 1.2V with a pulse width 3 ns.
6 Integrated Silicon Solution, Inc. — www.issi.com
Rev.  E
05/18/2010

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IS45S16100C1

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

Integrated Silicon Solution
Integrated Silicon Solution
IS45S16100E

512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM

Integrated Silicon Solution
Integrated Silicon Solution
IS45S16100F

512K Words x 16 Bits x 2 Banks 16Mb SDRAM

ISSI
ISSI


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