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IXTY3N60P PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTY3N60P
部品説明 Power MOSFET
メーカ IXYS
ロゴ IXYS ロゴ 



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IXTY3N60P Datasheet, IXTY3N60P PDF,ピン配置, 機能
PolarHVTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA 3N60P
IXTP 3N60P
IXTY 3N60P
www.DataSheet4U.com
VDSS = 600
ID25 = 3.0
RDS(on) 2.9
V
A
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Weight
Test Conditions
TJ = 25° C to 150° C
TJ = 25° C to 150° C; RGS = 1 M
Continuous
Transient
TC = 25° C
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
TC = 25° C
IS IDM, di/dt 100 A/µs, VDD VDSS
TJ 150° C, RG = 30
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
TO-220
TO-263
TO-252
Maximum Ratings
600 V
600 V
TO-263 (IXTA)
± 30
± 40
3.0
6
3
10
100
VG
VS
A
A TO-220 (IXTP)
A
mJ
mJ
(TAB)
5
70
-55 ... +150
150
-55 ... +150
300
260
4
3
0.35
V/ns
W
°C
°C
°C
°C
°C
g
g
g
GDS
TO-252 (IXTY)
G
S
G = Gate
S = Source
(TAB)
(TAB)
D = Drain
TAB = Drain
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 50 µA
IGSS VGS = ± 30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125° C
RDS(on)
VGS = 10 V, ID = 0.5 ID25, Note 1
Characteristic Values
Min. Typ. Max.
600 V
3.0 5.5 V
± 100 nA
5 µA
50 µA
2.9
Features
l International standard packages
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
Advantages
l Easy to mount
l Space savings
l High power density
© 2006 IXYS All rights reserved
DS99449E(04/06)

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